Inchange Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type MJE700/701/702/703 ・High DC current gain ・DARLINGTON APPLICATIONS ・Designed for general–purpose amplifier and low–speed switching applications PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MJE800/801 VCBO Collector-base voltage 60 Open base MJE802/803 VEBO Emitter-base voltage V 80 MJE800/801 Collector-emitter voltage UNIT 60 Open emitter MJE802/803 VCEO VALUE V 80 Open collector 5 V 4 A 0.1 A 40 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBE-1 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage CONDITIONS MJE800/801 TYP. MAX 60 IC=50mA;IB=0 V 80 MJE802/803 MJE800/802 UNIT IC=1.5A ;IB=30mA 2.5 V MJE801/803 IC=2A ;IB=40mA 2.8 Collector-emitter saturation voltage IC=4A ;IB=40mA 3.0 V 2.5 V 3.0 V 100 μA 100 500 μA 2 mA Base-emitter on voltage VBE-2 Base-emitter on voltage ICEO Collector cut-off current MJE800/802 IC=1.5A ; VCE=3V MJE801/803 IC=2A ; VCE=3V IC=4A ; VCE=3V MJE800/801 VCE=60V; IB=0 MJE802/803 VCE=80V; IB=0 ICBO Collector cut-off current VCB=Rated BVCEO; IE=0 TC=100℃ IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain MJE800/802 DC current gain IC=1.5A ; VCE=3V 750 MJE801/803 hFE-2 MIN IC=2A ; VCE=3V IC=4A ; VCE=3V 2 100 Inchange Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3