Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 ・ DESCRIPTION ・With TO-126 package ・Complement to type BD675/BD677/BD679 ・DARLINGTON ・High DC current gain APPLICATIONS ・For use as output devices in complementary general–purpose amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD676 VCBO VCEO Collector-base voltage Collector-emitter voltage BD678 Open emitter -60 BD680 -80 BD676 -45 BD678 Emitter -base voltage UNIT -45 Open base BD680 VEBO VALUE -60 V V -80 Open collector -5 V -4 A -0.1 A 40 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 3.13 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD676 V(BR)CEO V(BR)CBO Collector-emitter breakdown voltage Collector-base breakdown voltage BD678 IC=-50mA;IB=0 MAX UNIT -80 BD676 -45 IC=-1mA; IE=0 V -60 BD680 BD678 TYP. -45 BD680 V(BR)EBO MIN V -60 -80 Emitter-base breakdown voltage IE=-5mA;IC=0 VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-30mA -2.5 V VBE(on) Base-emitter on voltage IC=-1.5A ; VCE=-3V -2.5 V ICBO Collector cut-off current VCB=rated BVCEO; IE=0 Ta=100 ℃ -0.2 -2.0 mA ICEO Collector cut-off current VCE=1/2rated BVCEO; IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE DC current gain IC=-1.5A ; VCE=-3V 2 -5 750 V Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD676/BD678/BD680