Inchange Semiconductor Product Specification BU931P Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·High ruggedness electronic ignitions. ·High voltage ignition coil driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current -peak 30 A IB Base current 1 A IBM Base current -peak 5 A PT Total power dissipation 135 W Tj Max.operating junction temperature 175 ℃ -65~175 ℃ MAX UNIT 1.1 ℃/W Tstg TC=25℃ Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification BU931P Silicon NPN Power Transistors CHARACT ERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=10mH 400 VCEsat-1 Collector-emitter saturation voltage IC=7A ;IB=0.07A 1.6 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.1 A 1.8 V VCEsat-3 Collector-emitter saturation voltage IC=10A; IB=0.25 A 1.8 V VBEsat-1 Base-emitter saturation voltage IC=7A ;IB=0.07A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=8A; IB=0.1 A 2.4 V VBEsat-3 Base-emitter saturation voltage IC=10A; IB=0.25 A 2.5 V ICES Collector cut-off current VCE =500V; VBE=0; Tj=125℃ 0.1 0.5 mA ICEO Collector cut-off current VCE =450V; IB=0; Tj=125℃ 0.1 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 20 mA hFE DC current gain IC=5A ; VCE=10V VF Diode forward voltage IF=10A 2.5 V 2 TYP. MAX UNIT V 300 Inchange Semiconductor Product Specification BU931P Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3