isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY42 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 250V(Min.) ·DC Current Gain: hFE=20(Min.)@IC = 1A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC = 5A ·High Switching Speed APPLICATIONS ·Voltage regulator ·Inverter ·Switching mode power supply s c s i . w ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL w w PARAMETER n c . i m e VALUE UNIT 400 V 400 V 250 V VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 3 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ B isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY42 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 250 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.5A 2.0 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 VCB= 400V; IE= 0, TC=150℃ 0.2 2.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT tf toff w w B n c . i m e IC= 1A; VCE= 2V 20 IC= 5A; VCE= 2V 5 IC= 0.5A; VCE= 10V 10 Turn-on Time Fall Time MIN B s c s i . w Current Gain-Bandwidth Product Switching times ton CONDITIONS IC= 2.5A; IB1= -IB2= 0.5A Turn-off Time isc Website：www.iscsemi.cn 2 MAX UNIT MHz 0.5 μs 1.0 μs 4.0 μs