ISC MJE18008

Inchange Semiconductor
Product Specification
MJE18008
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage ,high speed
APPLICATIONS
・Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current (DC)
10
A
ICM
Collector current-Peak
16
A
IB
Base current
4
A
IBM
Base current-Peak
8
A
PD
Total power dissipation
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
1.0
℃/W
Rth j-A
Thermal resistance junction to ambient
62.5
℃/W
Inchange Semiconductor
Product Specification
MJE18008
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1
Collector-emitter saturation voltage
VCEsat-2
Collector-emitter saturation voltage
VBEsat-1
VBEsat-2
ICES
CONDITIONS
IC=0.1A; L=25mH
MIN
TYP.
MAX
450
UNIT
V
IC=2A; IB=0.2A
TC=125℃
IC=4.5A; IB=0.9A
TC=125℃
0.6
0.65
V
0.7
0.8
V
Base-emitter saturation voltage
IC=2A; IB=0.2A
1.10
V
Base-emitter saturation voltage
IC=4.5A; IB=0.9A
1.25
V
Collector cut-off current
0.1
VCES=RatedVCES;
VEB=0
0.5
mA
TC=125℃
VCES=800V
0.1
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
14
hFE-2
DC current gain
IC=4.5A ; VCE=1V
6
hFE-3
DC current gain
IC=2A ; VCE=1V
11
hFE-4
DC current gain
IC=10mA ; VCE=5V
10
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
13
MHz
Collector outoput capacitance
IE=0 ; VCB=10V;f=1MHz
100
pF
fT
COB
34
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
ton
Turn-on time
toff
Turn-off time
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=2A
IB1=0.2A; IB2=1.0A
VCC=300V ,IC=4.5A
IB1=0.9A; IB2=2.25A
2
0.3
μs
2.5
μs
0.18
μs
2.5
μs
Inchange Semiconductor
Product Specification
MJE18008
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.10mm)
3