JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 3CA1837 TRANSISTOR (PNP) FEATURES . High Transition Frequency : fT=70MHZ(Typ) . Complementary to 3DA4793 . Collector Power Dissipation PCM : 2W (Tamb=25℃) 20 W (Tcase=25℃) 1. BASE 2. COLLECTOR 3. EMITTE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1000 mA IB Base Current -100 mA TJ Junction Junction 150 ℃ Tstg Storage Junction -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Test unless otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA , IE=0 -230 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -230 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-230V, IE=0 -10 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -10 µA DC current gain hFE VCE=-5V, IC=-100mA Collector-emitter saturation voltage Transition frequency VCE(sat) IC=-500mA, IB=-50mA fT VCE=-10V, IC=-100mA 100 320 -1.5 30 V MHz Typical Characteristics 3CA1837