SEMICONDUCTOR KDV142E TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. Low Series resistance : rS=1.5[ ] (Max.). Small Package : ESC. E C 1 A Low Capacitance : CT=0.35[pF] (Max.) B CATHODE MARK FEATURES 2 D MAXIMUM RATING (Ta=25 CHARACTERISTIC F ) SYMBOL RATING UNIT Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range DIM A B C D E F 1. ANODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + 2. CATHODE ESC Marking Type Name E F ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR=30V - - 0.1 A Forward Voltage VF IF=10mA - - 1.0 V Total Capacitance CT VR=1V, f=1MHz - - 0.35 pF Series Resistance rs IF=10mA, f=100MHz - - 1.3 ESD-Capability * - C=200pF, R=0 , Both forward and reverse direction 1 pulse 100 - - V * Failure cirterion : IR>100nA at VR=30V. 2003. 10. 24 Revision No : 0 1/2 KDV142E 10 -2 10 -4 10 -6 10 -8 10 -10 10 -12 I R - VR - VF REVERSE CURRENT IR (A) FORWARD CURRENT I F (A) IF 0 0.4 0.2 0.6 0.8 1.0 10 -11 10 -12 10 -13 0 20 C T - VR rs 1.0 SERIES RESISTANCE r s (Ω) TOTAL CAPACITANCE C T (pF) f=1MHz 1.0 60 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE VF (V) 0.1 0.1 40 10 REVERSE VOLTAGE VR (V) 10 2 10 1 10 0 10 -1 - IF f=100MHz 10 -4 10 -3 10 -2 FORWARD CURRENT I F (A) SERIES RESISTANCE PARALLEL rp (Ω) r P - VF 10 5 10 4 10 3 10 2 10 1 10 0 f=100MHz 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 2003. 10. 24 Revision No : 0 2/2