SEMICONDUCTOR KDV143EL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES Low Operation Current. 2 1 E Small Package . A J I F H 2 1 B G D G MAXIMUM RATING (Ta=25 CHARACTERISTIC ) DIM A B C D E F G C SYMBOL RATING UNIT Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 1. ANODE 2. CATHCDE H MILLIMETERS _ 0.05 0.6 + _ 0.05 0.3 + _ 0.05 0.28 + _ 0.05 0.25 + _ 0.05 0.18 + Typ 0.36 _ 0.02 0.025 + _ 0.05 0.2 + I Max 0.3 J Typ 0.1 ELP-2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR =30V - - 0.1 A Forward Voltage VF IF = 2mA - - 0.9 V Total Capacitance CT VR =1V, f =1MHz - - 0.43 pF Series Resistance rs IF =2mA, f =100MHz - - 1.8 ESD-Capability * - C =200pF, R =0 , Both forward and reverse 100 - - direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. 2007. 8. 10 Revision No : 2 1/2 KDV143EL IR - VR IF - VF 10-8 REVERSE CURRENT IR (A) FORWARD CURRENT IF (A) 10-2 10-4 Ta=75 C Ta=50 C Ta=25 C 10-6 10-8 10-10 0.2 0.4 0.6 0.8 Ta=75 C 10-11 Ta=50 C 10-12 Ta=25 C 10-13 10 20 30 40 50 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) rs - IF CT - VR 100.0 f=100MHz 10.0 1.0 0.1 0.1 0 1.0 1.0 FORWARD CURRENT IF (mA) Revision No : 2 10.0 TOTAL CAPACITANCE CT (pF) 0 SERIES RESISTANCE rs (Ω) 10-10 10-14 10-12 2007. 8. 10 10-9 1.0 f=1MHz 0.1 1.0 10.0 REVERSE VOLTAGE VR (V) 2/2