SEMICONDUCTOR KDP629UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type (4 Diode in one package) Low Capacitance Low Series resistance 12 MAXIMUM RATING (Ta=25 DIM A B C D E F G ) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 7 BOTTOM VIEW F G TOP VIEW C SIDE VIEW MILLIMETERS _ 0.05 2.50 + _ 0.05 1.20 + _ 0.05 0.20 + _ 0.05 0.40 + _ 0.05 0.25 + _ 0.05 0.45 + Max 0.5 ULP-12 Marking EQUTVALENT CIRCUIT (TOP VIEW) 12 7 D4 D1 D2 Lot No. 1 P9 Type Name D3 6 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR=30V - - 0.1 A Forward Voltage VF IF=10mA - - 1.0 V Total Capacitance CT VR=1V, f=1MHz - - 0.30 pF Series Resistance rs IF=10mA, f=100MHz - - 1.3 ESD-Capability * - C=200pF, R=0 , Both forward and reverse 100 - - direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. 2008. 12. 8 Revision No : 0 1/2 KDP629UL IR - V R IF - VF 10-09 Ta=25 C REVERSE CURRENT IR (A) FORWARD CURRENT IF (A) 100 10-1 10-2 10-3 10-4 10-5 10-6 Ta=25 C 10-10 10-11 0 0.2 0.4 0.6 0.8 0 1.0 FORWARD VOLTAGE VF (V) 2 rs 8 10 - IF 100 f=1MHz Ta=25 C SERIES RESISTANCE rS (Ω) TOTAL CAPACITANCE CT (pF) 1.0 f=100MHz Ta=25 C 10 1 0 0 2 4 6 8 REVERSE VOLTAGE VR (V) 2008. 12. 8 6 REVERSE VOLTAGE VR (V) CT - VR 0.1 4 Revision No : 0 10 0 2 4 6 8 10 FORWARD CURRENT IF (mA) 2/2