SEMICONDUCTOR KDV142V TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES CATHODE MARK Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ ] (Max.) C D 1 2 Small Package : ESC B DIM A B C D E F A MAXIMUM RATING (Ta=25 RATING UNIT Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature Tj 150 Tstg -55 150 F SYMBOL E CHARACTERISTIC ) MILLIMETERS _ 0.05 1.4 + _ 0.05 1.0 + _ 0.05 0.6 + _ 0.03 0.28 + _ 0.05 0.5 + _ 0.03 0.12 + 1. ANODE Storage Temperature Range 2. CATHODE VSC Marking CATHODE MARK 2 1 PA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR=30V - - 0.1 A Forward Voltage VF IF=10mA - - 1.0 V Total Capacitance CT VR=1V, f=1MHz - - 0.35 pF Series Resistance rs IF=10mA, f=100MHz - - 1.3 ESD-Capability * - C=200pF, R=0 , Both forward and reverse 100 - - direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. 2006. 9. 8 Revision No : 0 1/2 KDV142V IF - VF IR - VR 10-11 REVERSE CURRENT IR (A) FORWARD CURRENT IF (A) 10-2 10-4 10-6 10-8 10-10 10-12 10-13 0 0.2 0.4 0.6 0.8 0 1.0 20 40 60 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT - VR rs - IF 1.0 102 f=1MHz SERIES RESISTANCE rS (Ω) TOTAL CAPACITANCE CT (pF) 10-12 0.1 0.1 1.0 10 f=100MHz 101 100 10-1 -4 10 10-3 10-2 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) SERIES RESISTANCE PARALLEL rP (Ω) rP - VF 105 f=100MHz 4 10 103 102 101 100 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 2006. 9. 8 Revision No : 0 2/2