KEC KDV142V

SEMICONDUCTOR
KDV142V
TECHNICAL DATA
SILICON EPITAXIAL PIN TYPE DIODE
For antenna switches in mobile applications.
FEATURES
CATHODE MARK
Low Capacitance : CT=0.35[pF] (Max.)
Low Series resistance : rS=1.3[
] (Max.)
C
D
1
2
Small Package : ESC
B
DIM
A
B
C
D
E
F
A
MAXIMUM RATING (Ta=25
RATING
UNIT
Reverse Voltage
VR
30
V
Forward Current
IF
100
mA
Junction Temperature
Tj
150
Tstg
-55 150
F
SYMBOL
E
CHARACTERISTIC
)
MILLIMETERS
_ 0.05
1.4 +
_ 0.05
1.0 +
_ 0.05
0.6 +
_ 0.03
0.28 +
_ 0.05
0.5 +
_ 0.03
0.12 +
1. ANODE
Storage Temperature Range
2. CATHODE
VSC
Marking
CATHODE MARK
2
1
PA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Current
IR
VR=30V
-
-
0.1
A
Forward Voltage
VF
IF=10mA
-
-
1.0
V
Total Capacitance
CT
VR=1V, f=1MHz
-
-
0.35
pF
Series Resistance
rs
IF=10mA, f=100MHz
-
-
1.3
ESD-Capability *
-
C=200pF, R=0 ,
Both forward and reverse
100
-
-
direction 1 pulse
* Failure cirterion : IR>100nA at VR=30V.
2006. 9. 8
Revision No : 0
1/2
KDV142V
IF - VF
IR - VR
10-11
REVERSE CURRENT IR (A)
FORWARD CURRENT IF (A)
10-2
10-4
10-6
10-8
10-10
10-12
10-13
0
0.2
0.4
0.6
0.8
0
1.0
20
40
60
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
CT - VR
rs - IF
1.0
102
f=1MHz
SERIES RESISTANCE rS (Ω)
TOTAL CAPACITANCE CT (pF)
10-12
0.1
0.1
1.0
10
f=100MHz
101
100
10-1 -4
10
10-3
10-2
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
SERIES RESISTANCE PARALLEL rP (Ω)
rP - VF
105
f=100MHz
4
10
103
102
101
100
0
0.2
0.4
0.6
0.8
FORWARD VOLTAGE VF (V)
2006. 9. 8
Revision No : 0
2/2