SEMICONDUCTOR KDV348E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES C CATHODE MARK 1 A ・Small Package. E B ・Low Series Resistance : rS=0.50Ω(Max.) 2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC D SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ IF 20 mA Storage Temperature Range Forward Current F DIM A B C D E F 1. ANODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + 2. CATHODE ESC Marking Lot No. VT Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT IR=1μA 10 - - V VR=6V - - 10 VR=6V, TA=85℃ - - 100 C1V VR=1V, f=1MHz 37 40 44 C2V VR=2V, f=1MHz 21 - 26 C3V VR=3V, f=1MHz 14 15.8 17.6 C4V VR=4V, f=1MHz - 12.1 - Reverse Voltage VR Reverse Current IR Capacitance Capacitance Ratio nA pF C1V/C3V f=1MHz 2.15 2.53 - - C1V/C4V f=1MHz - 3.3 - - VR=1V, f=470MHz - 0.25 0.5 Ω rS Series Resistance 2009. 11. 11 TEST CONDITION Revision No : 1 1/2 KDV348E I R - VR 10 CT - VR -11 100 f=1MHz 10 CAPACITANCE CT (pF) REVERSE CURRENT I R (A) 90 -12 80 70 60 50 40 30 20 10 10 -13 0 0 4 8 12 16 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) r s - VR SERIES RESISTANCE r s (Ω) 0.4 f=1MHz 0.3 0.2 0.1 0 0.5 1.0 3.0 5.0 10 30 50 REVERSE VOLTAGE VR (V) 2009. 11. 11 Revision No : 1 2/2