SEMICONDUCTOR KDS112V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌVery Small Package. ᴌSmall Total Capacitance : CT=1.2pF(Max.). ᴌLow Series Resistance : rS=0.6ή(Typ.). E B D G 1 3 K H A 2 MAXIMUM RATING (Ta=25ᴱ) RATING UNIT Reverse Voltage VR 30 V Forward Current IF 50 mA Junction Temperature Tj 125 ᴱ Tstg -55ᴕ125 ᴱ Storage Temperature Range P P J SYMBOL C CHARACTERISTIC DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 D 0.3 + _ 0.05 E 1.2 + _ 0.05 0.8 + G 0.40 H _ 0.05 0.12 + J _ 0.05 K 0.2 + P 5 3 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 VSM Marking BF ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=2mA - - 0.85 V Reverse Current IR VR=15V - - 0.1 Ọ A Reverse Voltage VR IR=1ỌA 30 - - V Total Capacitance CT VR=6V, f=1MHz - 0.8 1.2 pF Series Resistance rs IF=2mA, f=100MHz - 0.6 0.9 ή 2001. 7. 24 Revision No : 0 1/2 KDS112V rs - I F C T - VR 3 Ta=25 C f=100MHz TOTAL CAPACITANCE CT (pF) SERIES RESISTANCE r s (Ω) 3 1 0.5 Ta=25 C f=1MHz 1 0.5 0.3 0.3 1 3 5 10 20 FORWARD CURRENT I F (mA) 1 3 5 10 20 REVERSE VOLTAGE VR (V) I F - VF FORWARD CURRENT I F (A) 10 10 10 10 -1 Ta=25 C -2 -3 -4 0 0.4 0.8 1.2 1.6 2.0 2.4 FORWARD VOLTAGE V F (V) 2001. 7. 24 Revision No : 0 2/2