KEC KDS112V

SEMICONDUCTOR
KDS112V
TECHNICAL DATA
SILICON EPITAXIAL TYPE DIODE
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
ᴌVery Small Package.
ᴌSmall Total Capacitance : CT=1.2pF(Max.).
ᴌLow Series Resistance : rS=0.6ή(Typ.).
E
B
D
G
1
3
K
H
A
2
MAXIMUM RATING (Ta=25ᴱ)
RATING
UNIT
Reverse Voltage
VR
30
V
Forward Current
IF
50
mA
Junction Temperature
Tj
125
ᴱ
Tstg
-55ᴕ125
ᴱ
Storage Temperature Range
P
P
J
SYMBOL
C
CHARACTERISTIC
DIM MILLIMETERS
_ 0.05
A
1.2 +
_ 0.05
B
0.8 +
_ 0.05
C
0.5 +
_ 0.05
D
0.3 +
_ 0.05
E
1.2 +
_ 0.05
0.8 +
G
0.40
H
_ 0.05
0.12 +
J
_ 0.05
K
0.2 +
P
5
3
1. ANODE 1
2. ANODE 2
3. CATHODE
2
1
VSM
Marking
BF
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF
IF=2mA
-
-
0.85
V
Reverse Current
IR
VR=15V
-
-
0.1
Ọ
A
Reverse Voltage
VR
IR=1ỌA
30
-
-
V
Total Capacitance
CT
VR=6V, f=1MHz
-
0.8
1.2
pF
Series Resistance
rs
IF=2mA, f=100MHz
-
0.6
0.9
ή
2001. 7. 24
Revision No : 0
1/2
KDS112V
rs - I F
C T - VR
3
Ta=25 C
f=100MHz
TOTAL CAPACITANCE CT (pF)
SERIES RESISTANCE r s (Ω)
3
1
0.5
Ta=25 C
f=1MHz
1
0.5
0.3
0.3
1
3
5
10
20
FORWARD CURRENT I F (mA)
1
3
5
10
20
REVERSE VOLTAGE VR (V)
I F - VF
FORWARD CURRENT I F (A)
10
10
10
10
-1
Ta=25 C
-2
-3
-4
0
0.4
0.8
1.2
1.6
2.0
2.4
FORWARD VOLTAGE V F (V)
2001. 7. 24
Revision No : 0
2/2