SEMICONDUCTOR KDV142EL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ 2 1 E ] (Max.) A Small Package . J I F H 2 1 B G D G MAXIMUM RATING (Ta=25 CHARACTERISTIC ) C SYMBOL RATING UNIT Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range DIM A B C D E F G 1. ANODE 2. CATHCDE H MILLIMETERS _ 0.05 0.6 + _ 0.05 0.3 + _ 0.05 0.28 + _ 0.05 0.25 + _ 0.05 0.18 + Typ 0.36 _ 0.02 0.025 + _ 0.05 0.2 + I Max 0.3 J Typ 0.1 ELP-2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR=30V - - 0.1 A Forward Voltage VF IF=10mA - - 1.0 V Total Capacitance CT VR=1V, f=1MHz - - 0.35 pF Series Resistance rs IF=10mA, f=100MHz - - 1.3 - C=200pF, R=0 , Both forward and reverse 100 - - ESD-Capability * direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. 2007. 8. 10 Revision No : 1 1/2 KDV142EL IF I R - VR - VF 10 10 REVERSE CURRENT IR (A) FORWARD CURRENT IF (A) -2 10-4 10-6 -8 10 10-10 10-12 10 10 0 0.2 0.4 0.6 0.8 -11 -12 -13 0 1.0 20 FORWARD VOLTAGE VF (V) rs - VR 1.0 f=1MHz 1.0 10 SERIES RESISTANCE PARALLEL rp (Ω) FORWARD VOLTAGE VR (V) rP 10 10 10 10 10 10 10 10 10 10 0.1 0.1 60 REVERSE VOLTAGE VR (V) SERIES RESISTANCE rS (Ω) TOTAL CAPACITANCE CT (pF) CT 40 - IF 2 f=100MHz 1 0 -1 10 -4 10 -3 10 -2 FORWARD CURRENT IF (A) - VF 5 f=100MHz 4 3 2 1 0 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 2007. 8. 10 Revision No : 1 2/2