SEMICONDUCTOR KDV144EL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES Low Series resistance : rS=1.3[ 2 1 Low Capacitance : CT=0.30[pF] (Max.) E ] (Max.) A Small Package . J I 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) H B 1 RATING UNIT Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature Tj 150 Tstg -55 150 G D G DIM A B C D E F G C SYMBOL Storage Temperature Range F 1. ANODE 2. CATHCDE H MILLIMETERS _ 0.05 0.6 + _ 0.05 0.3 + _ 0.05 0.28 + _ 0.05 0.25 + _ 0.05 0.18 + Typ 0.36 _ 0.02 0.025 + _ 0.05 0.2 + I Max 0.3 J Typ 0.1 ELP-2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR=30V - - 0.1 A Forward Voltage VF IF=10mA - - 1.0 V Total Capacitance CT VR=1V, f=1MHz - - 0.30 pF Series Resistance rs IF=10mA, f=100MHz - - 1.3 - C=200pF, R=0 , Both forward and reverse 100 - - ESD-Capability * direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. 2008. 12. 16 Revision No : 2 1/2 KDV144EL IR - V R 100 10 10-09 Ta=25 C REVERSE CURRENT IR (A) FORWARD CURRENT IF (A) IF - VF -1 10-2 10-3 10-4 10-5 10-6 0 0.2 0.4 0.6 0.8 1.0 10-10 10-11 1.2 Ta=25 C 0 FORWARD VOLTAGE VF (V) 2 rs 0 2 4 6 8 REVERSE VOLTAGE VR (V) 2008. 12. 16 Revision No : 2 8 10 - IF 100 f=1MHz Ta=25 C SERIES RESISTANCE rS (Ω) TOTAL CAPACITANCE CT (pF) 0.1 6 REVERSE VOLTAGE VR (V) CT - VR 1.0 4 10 f=100MHz Ta=25 C 10 1 0 0 2 4 6 8 10 FORWARD CURRENT IF (mA) 2/2