SEMICONDUCTOR KDV175E TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. ・Low Series resistance : rS=7[Ω] (Typ.). ・Designed for low Inter Modulation. ・Small Package : ESC. E 1 A ・Low Capacitance : CT=0.25[pF] (Typ.) C B CATHODE MARK FEATURES 2 D F DIM A B C D E F MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 50 V Forward Current IF 50 mA Junction Temperature Tj 150 ℃ Tstg -55~150 ℃ Storage Temperature Range 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT V Reverse Voltage VR IR=10μA 50 - - Reverse Current IR VR=50V - - 0.1 Forward Voltage VF VF=50mA - 0.95 - V Total Capacitance CT VR=50V, f=1MHz - 0.25 - pF Series Resistance rs IF=10mA, f=100MHz - 7.0 - Ω Marking μA Type Name UE 2002. 6. 14 Revision No : 1 1/2 KDV175E C T - VR 1 0.5 0.3 0.1 1 3 5 10 REVERSE VOLTAGE VR (V) 2002. 6. 14 2k f=1MHz Ta=25 C SERIES RESISTANCE r s (Ω) TOTAL CAPACITANCE C T (pF) 2 rs - IF Revision No : 1 30 5 0 1k 500 300 0.4 100 0.6 0.8 Ta=25 C f=0.2GHz 1.0 50 30 1.0 0.8 0.6 0.4 10 5 2 f=0.2GHz 10µ 100µ 1m 10m 50m FORWARD CURRENT I F (A) 2/2