KEC KDV175E

SEMICONDUCTOR
KDV175E
TECHNICAL DATA
SILICON EPITAXIAL PIN TYPE DIODE
VHF~UHF BAND RF ATTENUATOR APPLICATIONS.
AGC FOR AM/FM TUNER.
・Low Series resistance : rS=7[Ω] (Typ.).
・Designed for low Inter Modulation.
・Small Package : ESC.
E
1
A
・Low Capacitance : CT=0.25[pF] (Typ.)
C
B
CATHODE MARK
FEATURES
2
D
F
DIM
A
B
C
D
E
F
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
VR
50
V
Forward Current
IF
50
mA
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
Storage Temperature Range
1. ANODE
2. CATHODE
MILLIMETERS
_ 0.10
1.60 +
_ 0.10
1.20 +
_ 0.10
0.80 +
_ 0.05
0.30 +
_ 0.10
0.60 +
_ 0.05
0.13 +
ESC
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
Reverse Voltage
VR
IR=10μA
50
-
-
Reverse Current
IR
VR=50V
-
-
0.1
Forward Voltage
VF
VF=50mA
-
0.95
-
V
Total Capacitance
CT
VR=50V, f=1MHz
-
0.25
-
pF
Series Resistance
rs
IF=10mA, f=100MHz
-
7.0
-
Ω
Marking
μA
Type Name
UE
2002. 6. 14
Revision No : 1
1/2
KDV175E
C T - VR
1
0.5
0.3
0.1
1
3
5
10
REVERSE VOLTAGE VR (V)
2002. 6. 14
2k
f=1MHz
Ta=25 C
SERIES RESISTANCE r s (Ω)
TOTAL CAPACITANCE C T (pF)
2
rs - IF
Revision No : 1
30
5
0
1k
500
300 0.4
100
0.6
0.8
Ta=25 C
f=0.2GHz
1.0
50
30
1.0
0.8
0.6
0.4
10
5
2
f=0.2GHz
10µ
100µ
1m
10m
50m
FORWARD CURRENT I F (A)
2/2