KDV1480 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES Applicable to FM wide band due to high capacitance ratio. E B L L Excellent C-V Characteristics. 2 H A 3 G Small Package. 1 RATING UNIT VR 16 V Reverse Voltage Junction Temperature Storage Temperature Range J C SYMBOL MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K CHARACTERISTIC ) P N P MAXIMUM RATING (Ta=25 D Variations of Capacitance Values is Little. DIM A B C D E G H J K L M N P 3 1. ANODE 1 Tj 150 Tstg -55 150 2. ANODE 2 3. CATHODE 2 1 SOT-23 Marking Lot No. Type Name CA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=10 A 16 - - V Reverse Current IR VR=10V - - 50 nA Capacitance (Note1) Figure of merit C3.0V VR=3.0V, f=1MHz 36.92 - 43.03 C4.5V VR=4.5V, f=1MHz 27.45 - 32.80 C6.0V VR=6.0V, f=1MHz 19.91 - 25.61 C8.0V VR=8.0V, f=1MHz 12.77 - 16.84 60 - - 2.50 - 3.00 Q C3.0V/C8.0V Capacitance Ratio VR=3.0V, f=100MHz - pF Note 1) Capacitance value of one diode. 2004. 2. 12 Revision No : 1 1/2 KDV1480 C - Ta 500 300 300 Hz) 0M Q 100 0 (f=1 100 50 50 30 30 C (f =1M Hz) 10 10 0 1 2 3 4 5 6 7 8 REVERSE VOLTAGE VR (V) 2004. 2. 12 Revision No : 1 9 10 11 1.03 CAPACITANCE RATIO 500 FIGURE OF MERIT Q CAPACITANCE C (pF) C, Q - VR 1.02 VR 1.01 0.98 V 6V 1.00 0.99 =3 VR 6V 3V 4V 8V =8V 4V 0.97 -30 -20 -10 0 10 20 30 40 50 60 70 80 AMBIENT TEMPERATURE Ta ( C) 2/2