SEMICONDUCTOR KDV273E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES ・High Capacitance Ratio : C1V/C4V =2.0(Typ.) ・Low Series Resistance : rs=0.39Ω(Typ.) MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1μA 10 - - V Reverse Current IR VR=10V - - 10 nA C1V VR=1V, f=1MHz 15 16 17 C4V VR=4V, f=1MHz 7.3 8.0 8.7 1.8 2.0 - - 0.39 0.5 Capacitance pF Capacitance Ratio K - Series Resistance rS VR=1V, f=470MHz 2008. 3. 24 Revision No : 1 Ω 1/2 KDV273E 2008. 3. 24 Revision No : 1 2/2