Transistors IC SMD Type Silicon PNP Epitaxial 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -4 V Collector-emitter voltage VCEO -50 V Peak collector current ICM -600 mA Collector current IC -400 mA Collector dissipation (Ta=25 ) PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Unit Electrical Characteristics Ta = 25 Parameter Symbol Colllector-base breakdown voltage Testconditons V(BR)CBO IC=-10ìA,IE=0 Min Typ Max Unit -55 V Emitter-base breakdown voltage V(BR)EBO IE=-10ìA,IC=0 -4 V Collector-emitter breakdown voltage V(BR)CEO IC=-100ìA,RBE= -50 V Collector cutoff current ICBO VCB=-25V,IE=0 Emitter cutoff current IEBO VEB=-2V,IC=0 DC current gain hFE VCE=-4V,IC=-100mA VCE(sat) IC=-200mA,IB=-10mA Collector-emitter saturation voltage Gain bandwidth product fT VCE=-6V,IE=-10mA 90 -1 ìA -1 ìA 500 -0.17 150 -0.5 V MHz hFE Classification Marking ZD ZE ZF hFE 90 180 150 300 250 500 www.kexin.com.cn 1