Transistors IC SMD Type Silicon PNP Epitaxial Type Transistor 2SA1832 SOT-523 Unit: mm +0.1 1.6-0.1 1.0 +0.05 0.2-0.05 +0.1 -0.1 2 +0.01 0.1-0.01 1 +0.15 1.6-0.15 Excellent hFE Linearity : +0.05 0.8-0.05 High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) 0.55 Features hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.) 0.35 3 High hFE: hFE=70 to 400 +0.25 0.3-0.05 +0.1 0.5-0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mA Collector power dissipation PC 100 mW Jumction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB = -5V , IE = 0 -0.1 A Emitter cutoff current IEBO VEB = -5V , IC = 0 -0.1 A DC current Gain hFE VCE = -6V , IC = -2mA 70 VCE(sat) IC = -100mA , IB = -10mA Collector-emitter saturation voltage Collector Output Capacitance Cob Transition frequency VCB=-10V,IE=0,f=1MHz VCE=-10V,IC=-1mA fT 80 400 -0.1 -0.3 V 4 7 pF MHz hFE Classification Marking SQ SY SG Rank Q Y GR hFE 70 140 120 240 200 400 www.kexin.com.cn 1