Transistors IC SMD Type Product specification KUK7109-75AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Q101 compliant 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 5 .2 8 -0+ 0.2.2 Standard level compatible. 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 Electrostatic discharge protection 5 .6 0 Integrated temperature sensor +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 75 V Drain-gate voltage VDGR 75 V Gate-source voltage VGS Drain-source voltage 20 V Drain current (DC) Tmb = 25 ,VGS = 10 V ID 120 A Drain current (DC) Tmb = 100 ,VGS = 10 V ID 75 A Drain current (pulse peak value) *1 IDM 480 A Total power dissipation Tmb = 25 Ptot 272 W 10 mA 50 mA gate-source clamping current (continuous) IGS(CL) gate-source clamping current *3 Tstg, Tj Storage & operating temperature IDR reverse drain current (DC) Tmb = 25 -55 to 175 120 A 75 A IDRM 480 A EDS(AL)S 739 J Vesd 6 KV Thermal resistance junction to mounting base Rth j-mb 0.55 K/W Thermal resistance junction to ambient Rth j-a 50 K/W pulsed reverse drain current *1 non-repetitive avalanche energy *2 electrostatic discharge voltage; all pins *4 * 1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 75 A;VDS *3 tp = 5 ms; 75 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 = 0.01 *4 Human Body Model; C = 100 pF;R = 1.5 K http://www.twtysemi.com [email protected] 4008-318-123 1of 2 Transistors IC SMD Type Product specification KUK7109-75AIE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min Typ IDSS ID = 0.25 mA; VGS = 0 V;Tj = 25 75 V 70 V ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 3 4.4 0.1 VDS = 75 V; VGS = 0 V;Tj = 25 gate-source leakage current drain-source on-state resistance V(BR)GSS IG = IGSS RDSon 1 mA;-55 Tj 20 175 VGS = 10 V; VDS = 0 V;Tj = 25 VGS = 10 V; VDS = 0 V;Tj = 175 total gate charge ID/Isense 22 Tj V 10 A 250 A 1000 nA 10 VGS = 10 V; ID = 50 A;Tj = 25 VGS > 10 V;-55 V 22 175 Qg(tot) VGS = 10 V; VDD = 60 V;ID = 25 A A . 8 9 m 19 m 450 500 550 VGS = 10 V; ID = 50 A;Tj = 175 ratio of drain current to sense current 4 V VDS = 75 V; VGS = 0 V;Tj = 175 gate-source breakdown voltage Unit ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max 121 nC gate-to-source charge Qgs 20 nC gate-to-drain (Miller) charge Qgd 44 nC input capacitance Ciss 4700 pF VGS = 0 V; VDS = 25 V;f = 1 MHz output capacitance Coss 800 pF reverse transfer capacitance Crss 455 pF turn-on delay time td(on) 35 ns 108 ns 185 ns 100 ns rise time turn-off delay time tr td(off) VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù fall time tf internal drain inductance Ld measured from upper edge of drain mounting base to center of die 2.5 nH internal source inductance Ls measured from source lead to source bond pad 7.5 nH Is = 25A; VGS = 0 V 0.85 source-drain (diode forward) voltage VSD 1.2 V reverse recovery time trr IS = 20 A; -dIF/dt = -100 A/ìs; 75 ns recovered charge Qr VGS = -10 V; VDS = 30 V 270 nC http://www.twtysemi.com [email protected] 4008-318-123 2 of 2