TYSEMI KUK7109

Transistors
IC
SMD Type
Product specification
KUK7109-75ATE
1 .2 7 -0+ 0.1.1
TO-263
Features
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
Integrated temperature sensor
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Standard level compatible.
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
1 5 .2 5 -0+ 0.2.2
Q101 compliant
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
5 .6 0
Electrostatic discharge protection
+0.1
5.08-0.1
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Symbol
Rating
Unit
VDS
75
V
Drain-gate voltage RGS = 20 KÙ
VDGR
75
V
Gate-source voltage
VGS
20
V
Drain current (DC) Tmb = 25 ,VGS = 10 V
ID
120
A
Drain current (DC) Tmb = 100 ,VGS = 10 V
ID
75
A
Drain current (pulse peak value) *1
IDM
480
A
Total power dissipation Tmb = 25
Ptot
272
W
10
mA
50
mA
gate-source clamping current (continuous)
IGS(CL)
gate-source clamping current *3
FET to temperature sense diode isolation voltage
Visol(FET-TSD)
Tstg, Tj
Storage & operating temperature
100
V
-55 to 175
120
A
75
A
480
A
reverse drain current (DC) Tmb = 25
IDR
pulsed reverse drain current *1
IDRM
EDS(AL)S
739
J
Thermal resistance junction to mounting base
Rth j-mb
0.55
K/W
Thermal resistance junction to ambient
Rth j-a
50
K/W
non-repetitive avalanche energy *2
* 1 Tmb = 25 ; pulsed; tp
10 ìs;
*2 unclamped inductive load; ID = 75 A;VDS
*3 tp = 5 ms;
75 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25
= 0.01
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
KUK7109-75ATE
Electrical Characteristics Ta = 25
Parameter
Symbol
drain-source breakdown voltage
V(BR)DSS
gate-source threshold voltage
VGS(th)
Testconditons
Min
ID = 0.25 mA; VGS = 0 V;Tj = 25
75
ID = 0.25 mA; VGS = 0 V;Tj = -55
70
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
Typ
IDSS
V
3
V(BR)GSS IG =
gate-source leakage current
IGSS
drain-source on-state resistance
RDSon
1 mA;-55
Tj
0.1
20
175
VGS =
10 V; VDS = 0 V;Tj = 25
VGS =
10 V; VDS = 0 V;Tj = 175
forward voltage; temperature sense diode
22
total gate charge
gate-to-source charge
IF = 250 mA
SF
IF = 250 mA;-55
Vhys
125 mA
IF
648
Tj
-1.4
175
25
250 mA
Qg(tot)
Qgs
10
A
250
A
1000
nA
10
.
VGS = 10 V; ID = 50 A;Tj = 25
VF
V
22
8
VGS = 10 V; ID = 50 A;Tj = 175
temperature coefficient temperature sense
diode
temperature sense diode forward voltage
hysteresis
V
V
VDS = 75 V; VGS = 0 V;Tj = 175
gate-source breakdown voltage
4
4.4
VDS = 75 V; VGS = 0 V;Tj = 25
Unit
V
ID = 1 mA; VDS = VGS;Tj = -55
Zero gate voltage drain current
Max
VGS = 10 V; VDD = 60 V;ID = 25 A
658
A
9
m
19
m
668
mV
-1.54 -1.68 mV/K
32
50
mV
121
nC
20
nC
gate-to-drain (Miller) charge
Qgd
44
input capacitance
Ciss
4700
3760
pF
output capacitance
Coss
800
665
pF
274
pF
VGS = 0 V; VDS = 25 V;f = 1 MHz
nC
reverse transfer capacitance
Crss
455
turn-on delay time
td(on)
35
ns
108
ns
185
ns
100
ns
rise time
turn-off delay time
tr
td(off)
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG =
10Ù
fall time
tf
internal drain inductance
Ld
measured from upper edge of drain
mounting base to center of die
2.5
nH
internal source inductance
Ls
measured from source lead to source
bond pad
7.5
nH
Is = 25A; VGS = 0 V
0.85
source-drain (diode forward) voltage
VSD
1.2
V
reverse recovery time
trr
IS = 20 A; -dIF/dt = -100 A/ìs;
75
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
270
nC
http://www.twtysemi.com
[email protected]
4008-318-123
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