Transistors IC SMD Type Product specification KUK7105-40ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 Q101 compliant 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Electrostatic discharge protection +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-source voltage Parameter VDS 40 V Drain-gate voltage VDGS 40 V Gate-source voltage VGS 20 V Drain current (DC) Tmb = 25 ,VGS = 10 V ID 155 A Drain current (DC) Tmb = 100 ,VGS = 10 V ID 75 A peak drain current *1 IDM 620 A Total power dissipation Tmb = 25 Ptot 272 W 10 mA 50 mA gate-source clamping current (continuous) IGS(CL) gate-source clamping current *3 FET to temperature sense diode isolation voltage Visol(FET-TSD) Tstg, Tj Storage & operating temperature 100 V -55 to 175 155 A 75 A IDRM 620 A reverse drain current (DC) Tmb = 25 IDR pulsed reverse drain current *1 EDS(AL)S 1.46 J Thermal resistance junction to mounting base Rth j-mb 0.55 K/W Thermal resistance junction to ambient Rth j-a 50 K/W non-repetitive avalanche energy *2 * 1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 75 A;VDS *3 tp = 5 ms; 40 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 = 0.01 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KUK7105-40ATE Electrical Characteristics Ta = 25 Parameter Symbol drain-source breakdown voltage V(BR)DSS gate-source threshold voltage VGS(th) Testconditons Min Typ IDSS ID = 0.25 mA; VGS = 0 V;Tj = 25 40 V 36 V ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 3 4.4 0.1 VDS = 40 V; VGS = 0 V;Tj = 25 V(BR)GSS IG = gate-source leakage current IGSS drain-source on-state resistance RDSon 1 mA;-55 Tj 20 175 VGS = 10 V; VDS = 0 V;Tj = 25 VGS = 10 V; VDS = 0 V;Tj = 175 IF = 250 ìA temperature coefficient temperature sense diode SF IF = 250 ìA;-55 temperature sense diode forward voltage hysteresis total gate charge Vhys 125 ìA IF Tj V A 250 A 1000 nA V 10 4.5 5 m 9.5 m 648 658 668 mV -1.4 175 25 250 ìA Qg(tot) VGS = 10 V; VDD = 32 V;ID = 25 A A . VGS = 10 V; ID = 50 A;Tj = 175 VF V 10 22 22 VGS = 10 V; ID = 50 A;Tj = 25 forward voltage, temperature sense diode 4 V VDS = 40 V; VGS = 0 V;Tj = 175 gate-source breakdown voltage Unit ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max -1.54 -1.68 mV/K 32 50 mV 118 nC gate-to-source charge Qgs 16 nC gate-to-drain (Miller) charge Qgd 57 nC input capacitance Ciss 4500 pF output capacitance Coss 1500 pF reverse transfer capacitance Crss 960 pF turn-on delay time td(on) 35 ns 115 ns 155 ns 110 ns rise time turn-off delay time tr td(off) VGS = 0 V; VDS = 25 V;f = 1 MHz VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù fall time tf internal drain inductance Ld measured from upper edge of drain mounting base to center of die 2.5 nH internal source inductance Ls measured from source lead to source bond pad 7.5 nH Is = 25A; VGS = 0 V 0.85 source-drain (diode forward) voltage VSD 1.2 V reverse recovery time trr IS = 20 A; dIF/dt = -100 A/ìs; 96 ns recovered charge Qr VGS = -10 V; VDS = 30 V 224 nC http://www.twtysemi.com [email protected] 4008-318-123 2 of 2