TYSEMI KUK7105

Transistors
IC
SMD Type
Product specification
KUK7105-40ATE
1 .2 7 -0+ 0.1.1
TO-263
Features
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
Integrated temperature sensor
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Standard level compatible.
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
Q101 compliant
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
5 .6 0
Electrostatic discharge protection
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain-source voltage
Parameter
VDS
40
V
Drain-gate voltage
VDGS
40
V
Gate-source voltage
VGS
20
V
Drain current (DC) Tmb = 25 ,VGS = 10 V
ID
155
A
Drain current (DC) Tmb = 100 ,VGS = 10 V
ID
75
A
peak drain current *1
IDM
620
A
Total power dissipation Tmb = 25
Ptot
272
W
10
mA
50
mA
gate-source clamping current (continuous)
IGS(CL)
gate-source clamping current *3
FET to temperature sense diode isolation voltage
Visol(FET-TSD)
Tstg, Tj
Storage & operating temperature
100
V
-55 to 175
155
A
75
A
IDRM
620
A
reverse drain current (DC) Tmb = 25
IDR
pulsed reverse drain current *1
EDS(AL)S
1.46
J
Thermal resistance junction to mounting base
Rth j-mb
0.55
K/W
Thermal resistance junction to ambient
Rth j-a
50
K/W
non-repetitive avalanche energy *2
* 1 Tmb = 25 ; pulsed; tp
10 ìs;
*2 unclamped inductive load; ID = 75 A;VDS
*3 tp = 5 ms;
40 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25
= 0.01
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
KUK7105-40ATE
Electrical Characteristics Ta = 25
Parameter
Symbol
drain-source breakdown voltage
V(BR)DSS
gate-source threshold voltage
VGS(th)
Testconditons
Min
Typ
IDSS
ID = 0.25 mA; VGS = 0 V;Tj = 25
40
V
36
V
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
3
4.4
0.1
VDS = 40 V; VGS = 0 V;Tj = 25
V(BR)GSS IG =
gate-source leakage current
IGSS
drain-source on-state resistance
RDSon
1 mA;-55
Tj
20
175
VGS =
10 V; VDS = 0 V;Tj = 25
VGS =
10 V; VDS = 0 V;Tj = 175
IF = 250 ìA
temperature coefficient temperature sense
diode
SF
IF = 250 ìA;-55
temperature sense diode forward voltage
hysteresis
total gate charge
Vhys
125 ìA
IF
Tj
V
A
250
A
1000
nA
V
10
4.5
5
m
9.5
m
648
658
668
mV
-1.4
175
25
250 ìA
Qg(tot)
VGS = 10 V; VDD = 32 V;ID = 25 A
A
.
VGS = 10 V; ID = 50 A;Tj = 175
VF
V
10
22
22
VGS = 10 V; ID = 50 A;Tj = 25
forward voltage, temperature sense diode
4
V
VDS = 40 V; VGS = 0 V;Tj = 175
gate-source breakdown voltage
Unit
ID = 0.25 mA; VGS = 0 V;Tj = -55
ID = 1 mA; VDS = VGS;Tj = -55
Zero gate voltage drain current
Max
-1.54 -1.68 mV/K
32
50
mV
118
nC
gate-to-source charge
Qgs
16
nC
gate-to-drain (Miller) charge
Qgd
57
nC
input capacitance
Ciss
4500
pF
output capacitance
Coss
1500
pF
reverse transfer capacitance
Crss
960
pF
turn-on delay time
td(on)
35
ns
115
ns
155
ns
110
ns
rise time
turn-off delay time
tr
td(off)
VGS = 0 V; VDS = 25 V;f = 1 MHz
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG =
10Ù
fall time
tf
internal drain inductance
Ld
measured from upper edge of drain
mounting base to center of die
2.5
nH
internal source inductance
Ls
measured from source lead to source
bond pad
7.5
nH
Is = 25A; VGS = 0 V
0.85
source-drain (diode forward) voltage
VSD
1.2
V
reverse recovery time
trr
IS = 20 A; dIF/dt = -100 A/ìs;
96
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
224
nC
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2