TYSEMI KUK7108

Transistors
IC
SMD Type
Product specification
KUK7108-40AIE
1 .2 7 -0+ 0.1.1
TO-263
Features
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
ESD protection
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Standard level compatible.
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
Q101 compliant
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
5 .6 0
Integrated current sensor
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
40
V
Drain-gate voltage RGS = 20 KÙ
VDGR
40
V
Gate-source voltage
VGS
Drain-source voltage
20
V
Drain current (DC) Tmb = 25 ,VGS = 10 V
ID
117
A
Drain current (DC) Tmb = 100 ,VGS = 10 V
ID
75
A
Drain current (pulse peak value) *1
IDM
468
A
Total power dissipation Tmb = 25
Ptot
221
W
10
mA
50
mA
gate-source clamping current (continuous)
IGS(CL)
gate-source clamping current *3
Tstg, Tj
Storage & operating temperature
-55 to 175
117
A
75
A
468
A
reverse drain current (DC) Tmb = 25
IDR
pulsed reverse drain current *1
IDRM
EDS(AL)S
0.63
J
non-repetitive avalanche energy *2
electrostatic discharge voltage; all pins *4
Vesd
6
kV
Thermal resistance junction to mounting base
Rth j-mb
0.68
K/W
Thermal resistance junction to ambient
Rth j-a
50
K/W
* 1 Tmb = 25 ; pulsed; tp
10 ìs;
*2 unclamped inductive load; ID = 75 A;VDS
*3 tp = 5 ms;
40 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25
= 0.01
*4 Human Body Model; C = 100 pF; R = 1.5 k
http://www.twtysemi.com
[email protected]
4008-318-123
1of 2
Transistors
IC
SMD Type
Product specification
KUK7108-40AIE
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Symbol
V(BR)DSS
VGS(th)
Testconditons
Min
ID = 0.25 mA; VGS = 0 V;Tj = 25
40
ID = 0.25 mA; VGS = 0 V;Tj = -55
36
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
Typ
IDSS
V
3
gate-source leakage current
drain-source on-state resistance
V(BR)GSS
IGSS
RDSon
IG =
1 mA;-55
Tj
0.1
20
175
10 V; VDS = 0 V;Tj = 25
VGS =
10 V; VDS = 0 V;Tj = 175
ratio of drain current to sense current
total gate charge
RD(Is)on
ID/Isense
Qgs
gate-to-drain (Miller) charge
Qgd
input capacitance
Ciss
output capacitance
Coss
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
6
A
300
nA
A
8
m
15.2
m
1.59
1.87
2.20
VGS = 10 V; ID = 25 mA;Tj = 175
3.02
3.55
4.18
450
500
550
78
84
nC
14
16
nC
34
36
nC
VGS
10 V; Rsense = 0 Ù;-55
< Tj < 175
VGS = 10 V; VDD = 32 V;ID = 25 A
2670
3140
pF
900
1053
pF
Crss
560
653
pF
td(on)
19
ns
tr
76
ns
121
ns
VGS = 0 V; VDS = 25 V;f = 1 MHz
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù
td(off)
tf
122
ns
2.5
nH
nH
internal drain inductance
Ld
measured from upper edge of drain mounting
base to center of die
internal source inductance
Ls
measured from source lead to source bond
pad
7.5
Is = 25A; VGS = 0 V
0.85
source-drain (diode forward) voltage
A
VGS = 10 V; ID = 25 mA;Tj = 25
Qg(tot)
gate-to-source charge
10
250
10
.
VGS = 10 V; ID = 50 A;Tj = 25
VGS = 10 V; ID = 50 A;Tj = 175
drain-Isense on-state resistance
V
22
22
VGS =
V
V
VDS = 40 V; VGS = 0 V;Tj = 175
gate-source breakdown voltage
4
4.4
VDS = 40 V; VGS = 0 V;Tj = 25
Unit
V
ID = 1 mA; VDS = VGS;Tj = -55
Zero gate voltage drain current
Max
VSD
1.2
V
reverse recovery time
trr
IS = 20 A; -dIF/dt = -100 A/ìs;
55
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
30
nC
http://www.twtysemi.com
[email protected]
4008-318-123
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