Transistors IC SMD Type Product specification KUK7108-40AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 ESD protection 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 Q101 compliant 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Integrated current sensor +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 40 V Drain-gate voltage RGS = 20 KÙ VDGR 40 V Gate-source voltage VGS Drain-source voltage 20 V Drain current (DC) Tmb = 25 ,VGS = 10 V ID 117 A Drain current (DC) Tmb = 100 ,VGS = 10 V ID 75 A Drain current (pulse peak value) *1 IDM 468 A Total power dissipation Tmb = 25 Ptot 221 W 10 mA 50 mA gate-source clamping current (continuous) IGS(CL) gate-source clamping current *3 Tstg, Tj Storage & operating temperature -55 to 175 117 A 75 A 468 A reverse drain current (DC) Tmb = 25 IDR pulsed reverse drain current *1 IDRM EDS(AL)S 0.63 J non-repetitive avalanche energy *2 electrostatic discharge voltage; all pins *4 Vesd 6 kV Thermal resistance junction to mounting base Rth j-mb 0.68 K/W Thermal resistance junction to ambient Rth j-a 50 K/W * 1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 75 A;VDS *3 tp = 5 ms; 40 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 = 0.01 *4 Human Body Model; C = 100 pF; R = 1.5 k http://www.twtysemi.com [email protected] 4008-318-123 1of 2 Transistors IC SMD Type Product specification KUK7108-40AIE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min ID = 0.25 mA; VGS = 0 V;Tj = 25 40 ID = 0.25 mA; VGS = 0 V;Tj = -55 36 ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 Typ IDSS V 3 gate-source leakage current drain-source on-state resistance V(BR)GSS IGSS RDSon IG = 1 mA;-55 Tj 0.1 20 175 10 V; VDS = 0 V;Tj = 25 VGS = 10 V; VDS = 0 V;Tj = 175 ratio of drain current to sense current total gate charge RD(Is)on ID/Isense Qgs gate-to-drain (Miller) charge Qgd input capacitance Ciss output capacitance Coss reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time 6 A 300 nA A 8 m 15.2 m 1.59 1.87 2.20 VGS = 10 V; ID = 25 mA;Tj = 175 3.02 3.55 4.18 450 500 550 78 84 nC 14 16 nC 34 36 nC VGS 10 V; Rsense = 0 Ù;-55 < Tj < 175 VGS = 10 V; VDD = 32 V;ID = 25 A 2670 3140 pF 900 1053 pF Crss 560 653 pF td(on) 19 ns tr 76 ns 121 ns VGS = 0 V; VDS = 25 V;f = 1 MHz VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù td(off) tf 122 ns 2.5 nH nH internal drain inductance Ld measured from upper edge of drain mounting base to center of die internal source inductance Ls measured from source lead to source bond pad 7.5 Is = 25A; VGS = 0 V 0.85 source-drain (diode forward) voltage A VGS = 10 V; ID = 25 mA;Tj = 25 Qg(tot) gate-to-source charge 10 250 10 . VGS = 10 V; ID = 50 A;Tj = 25 VGS = 10 V; ID = 50 A;Tj = 175 drain-Isense on-state resistance V 22 22 VGS = V V VDS = 40 V; VGS = 0 V;Tj = 175 gate-source breakdown voltage 4 4.4 VDS = 40 V; VGS = 0 V;Tj = 25 Unit V ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max VSD 1.2 V reverse recovery time trr IS = 20 A; -dIF/dt = -100 A/ìs; 55 ns recovered charge Qr VGS = -10 V; VDS = 30 V 30 nC http://www.twtysemi.com [email protected] 4008-318-123 2of 2