2SD2118 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product D-Pack 6. 50Ć0. 15 FEATURES 2. 30Ć0. 10 5. 30Ć0. 10 C 0. 51Ć0. 05 0. 51Ć0. 10 1. 20 0. 75Ć0. 10 0Ć0. 10 5 5 1. 60Ć0. 15 0. 6 0. 80Ć0. 10 0. 60Ć 0. 10 2. 30Ć0. 10 B C E 2. 30Ć0. 10 0 Ć9 0. 51 2. 70Ć0. 20 9. 70Ć0. 20 • Excellent DC Current Gain Characteristics 5. 50Ć0. 10 5 • Low Collector-to-Emitter Voltage (Typ. 0.25 V) MAXIMUM RATINGS* (TA=25oC unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V Collector Current IC 5 A Collector Dissipation PC 1 W Junction Temperature Tj - 55~+150 °C Storage Temperature TSTG - 55~+150 °C ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) O Parameter Symbol Min Typ. Max Unit. Test Conditions Collector-Base Breakdown Voltage BVCBO 50 - - V I C=50µA, I E=0 Collector-Emitter Breakdown Voltage BVCEO 20 - - V I C=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 6 - - V I E=50µA, I C=0 Collector-Base Cutoff Current I CBO - - 0.5 µA VCB=40V, I E=0 Emitter-Base Cutoff Current I EBO - - 0.5 µA VEB=5V, I C=0 Collector Saturation Voltage VCE(sat) - 0.25 1 V DC Current Gain hFE 120 - 390 Gain-Bandwidth Product fT - 150 - MHz Output Capacitance Cob - 30 - pF IC=4A, I B=100mA VCE=2V, I C=500mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz CLASSIFICATION OF hFE Rank Q R Range 120-270 180-390 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2SD2118 Elektronische Bauelemente NPN Silicon General Purpose Transistor Typical Characteristics http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SD2118 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Silicon General Purpose Transistor Any changing of specification will not be informed individual Page 3 of 3