SECOS 2SD2118

2SD2118
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
D-Pack
6. 50Ć0. 15
FEATURES
2. 30Ć0. 10
5. 30Ć0. 10
C
0. 51Ć0. 05
0. 51Ć0. 10 1. 20
0. 75Ć0. 10
0Ć0. 10
5
5
1. 60Ć0. 15
0. 6
0. 80Ć0. 10
0. 60Ć 0. 10
2. 30Ć0. 10
B
C
E
2. 30Ć0. 10
0 Ć9
0. 51
2. 70Ć0. 20
9. 70Ć0. 20
• Excellent DC Current Gain Characteristics
5. 50Ć0. 10
5
• Low Collector-to-Emitter Voltage (Typ. 0.25 V)
MAXIMUM RATINGS* (TA=25oC unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
5
A
Collector Dissipation
PC
1
W
Junction Temperature
Tj
- 55~+150
°C
Storage Temperature
TSTG
- 55~+150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)
O
Parameter
Symbol
Min
Typ.
Max
Unit.
Test Conditions
Collector-Base Breakdown Voltage
BVCBO
50
-
-
V
I C=50µA, I E=0
Collector-Emitter Breakdown Voltage
BVCEO
20
-
-
V
I C=1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO
6
-
-
V
I E=50µA, I C=0
Collector-Base Cutoff Current
I CBO
-
-
0.5
µA
VCB=40V, I E=0
Emitter-Base Cutoff Current
I EBO
-
-
0.5
µA
VEB=5V, I C=0
Collector Saturation Voltage
VCE(sat)
-
0.25
1
V
DC Current Gain
hFE
120
-
390
Gain-Bandwidth Product
fT
-
150
-
MHz
Output Capacitance
Cob
-
30
-
pF
IC=4A, I B=100mA
VCE=2V, I C=500mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0, f=1MHz
CLASSIFICATION OF hFE
Rank
Q
R
Range
120-270
180-390
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
2SD2118
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
Typical Characteristics
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3
2SD2118
Elektronische Bauelemente
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
NPN Silicon
General Purpose Transistor
Any changing of specification will not be informed individual
Page 3 of 3