SGM2310A 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION A The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2310A is universally used for all commercial-industrial applications. CB Top View K 4 1 L 2 3 E D F FEATURES Simple drive requirement Super high density cell design for extremely low RDS(ON) REF. D 24 MARKING 2310A = Date code G A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 H REF. G H J K L J Millimeter Min. Max. 0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF. 1 G 3 S ABSOLUTE MAXIMUM RATINGS SYMBOL RATINGS UNIT Drain-Source Voltage PARAMETER VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 ID @ TA = 25°C 5.0 A Continuous Drain Current3 ID @ TA = 70°C 4.0 A Pulsed Drain Current 1,2 Power Dissipation IDM 10 A PD @ TA = 25°C 1.5 W 0.01 W / °C TJ, TSTG -55~150 °C SYMBOL VALUE UNIT RθJA 83.3 °C / W Linear Derating Factor Operating Junction & Storage Temperature THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient3(Max). http://www.SeCoSGmbH.com/ 16-Dec-2009 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SGM2310A 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITIONS Drain-Source Breakdown Voltage BVDSS 60 - - V VGS = 0, ID = 250µA Gate Threshold Voltage VGS(th) 0.5 - 1.5 V VDS=VGS, ID=250µA Forward Transconductance gfs - 12 - S VDS = 15V, ID = 4A Gate-Source Leakage Current IGSS - - ±100 nA VGS = ±20V µA Drain-Source Leakage Current (TJ=25℃ ) Drain-Source Leakage Current (TJ=70℃ ) Static Drain-Source On-Resistance IDSS RDS(ON) - - 1 - - 10 - - 115 - - 125 Total Gate Charge2 Qg - 4.0 - Gate-Source Charge Qgs - 1.2 - Gate-Drain (“Miller”) Charge Qgd - 1.0 - Td(on) - 6 - Tr - 12 - Td(off) - 18 - Tf - 10 - 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Ciss - 320 - Output Capacitance Coss - 42 - Reverse Transfer Capacitance Crss - 20 - Forward On Voltage2 VSD mΩ VDS = 60 V, VGS = 0 VDS = 60 V, VGS = 0 VGS=10V, ID=5.0A VGS=4.5V, ID=4.5A nC ID = 4 A VDS = 30 V VGS =4.5 V nS VDD = 30 V ID =2.5 A VGS =10 V RG = 6Ω, RL = 12Ω pF VGS = 0 V VDS = 30 V f = 1.0 MHz V IS=2.5A, VGS=0V SOURCE-DRAIN DIODE Notes: - - 1.2 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300µs, duty cycle≦2%. 3. Surface mounted on FR4 board, t ≦10sec. http://www.SeCoSGmbH.com/ 16-Dec-2009 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SGM2310A Elektronische Bauelemente 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 16-Dec-2009 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SGM2310A Elektronische Bauelemente 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 16-Dec-2009 Rev. A Any changes of specification will not be informed individually. Page 4 of 4