SECOS 2SC1623F

2SC1623F
150 mA, 60 V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
DESCRIPTION
The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application.
PACKAGE DIMENSIONS
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
A
A1
A2
D
E
HE
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5
V
IC
150
mA
Pd
250
mW
TJ, TSTG
+150, -55 ~ +150
℃
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
CHARACTERISTICS at Ta = 25°C
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=100uA
BVCEO
50
-
-
V
IC=1mA
BVEBO
5
-
-
V
IE=10uA
ICBO
-
-
100
nA
VCB=60V
IEBO
-
-
100
nA
VEB=5V
*VCE(sat)
-
-
250
mV
IC=100mA, IB=10mA
V
IC=100mA, IB=10mA
*VBE(sat)1
-
-
1.0
*hFE1
90
-
600
*hFE2
25
-
-
VCE=6V, IC=150mA
*hFE3
80
-
-
VCE=1V, IC=10mA
fT
80
-
-
MHz
-
-
3.5
pF
Cob
VCE=6V, IC=1mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0A
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF hFE1
Rank
Range
01-June-2002 Rev. A
P
Y
G
B
90 - 180
135 - 270
200 - 400
300 - 600
Page 1 of 2
2SC1623F
Elektronische Bauelemente
150 mA, 60 V
NPN Epitaxial Planar Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 2 of 2