2SC1623F 150 mA, 60 V NPN Epitaxial Planar Transistor Elektronische Bauelemente DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. A A1 A2 D E HE REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V IC 150 mA Pd 250 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Currrent Total Power Dissipation Junction, Storage Temperature CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=100uA BVCEO 50 - - V IC=1mA BVEBO 5 - - V IE=10uA ICBO - - 100 nA VCB=60V IEBO - - 100 nA VEB=5V *VCE(sat) - - 250 mV IC=100mA, IB=10mA V IC=100mA, IB=10mA *VBE(sat)1 - - 1.0 *hFE1 90 - 600 *hFE2 25 - - VCE=6V, IC=150mA *hFE3 80 - - VCE=1V, IC=10mA fT 80 - - MHz - - 3.5 pF Cob VCE=6V, IC=1mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz, IE=0A * Pulse Test: Pulse Width≦380μs, Duty Cycle≦2% CLASSIFICATION OF hFE1 Rank Range 01-June-2002 Rev. A P Y G B 90 - 180 135 - 270 200 - 400 300 - 600 Page 1 of 2 2SC1623F Elektronische Bauelemente 150 mA, 60 V NPN Epitaxial Planar Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 2