SECOS SSF7401

SSF7401
-30V , -2A
P-Ch Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
DESCRIPTION
The SSF7401 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltage as low as 2.5V. It can be
used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. The SSF7401 is universally used for all
commercial-industrial applications.
A
3
●
C B
Top View
1
1
K
2
E
2
D
FEATURES
●
L
3
F
Small Package Outline
Lower Gate Charge
REF.
A
B
C
D
E
F
MARKING CODE
7401
H
G
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
0.650 TYP.
D

PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-323
3K
7 inch

G

S
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
-2
A
-1.5
A
-10
A
0.0028
°C / W
PD
0.35
W
RθJA
360
°C / W
TJ, TSTG
-55~150
°C
Continuous Drain Current 3
Pulsed Drain Current
TA=25°C
TA=70°C
1.2
ID
IDM
Linear Derating Factor
Power Dissipation
Thermal Resistance Junction-Ambient
3
Operating Junction and Storage Temperature
Note:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300μs, duty cycle≦2%.
3. Surface mounted on FR4 board, t≦10sec
http://www.SeCoSGmbH.com/
18-Oct-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
SSF7401
-30V , -2A
P-Ch Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Current
Zero Gate Voltage Drain
Current
TJ = 25°C
TJ = 70°C
Drain-Source on-State Resistance
Symbol
Min.
Typ.
Max.
Unit
V(BR)DSS
-30
-
-
V
VGS=0, ID= -250μA
VGS(th)
-0.5
-
-1.2
V
VDS=VGS, ID= -250μA
IGSS
-
-
±100
nA
VGS= ±12V
-
-
-1
-
-
-10
-
-
120
-
-
150
-
-
190
IDSS
RDS(ON)
Forward Transconductance
gFS
-
4
Gate Resistance
Rg
-
12
-
μA
Test Conditions
VDS= -30V, VGS=0
VDS= -24V, VGS=0
VGS = -10V, ID = -2A
mΩ
VGS = -4.5V, ID = -1.5A
VGS = -2.5V, ID = -1A
S
VDS = -5V, ID = -1.2A
Ω
f=1.0MHz
nC
VDS= -15V,
VGS= -4.5V,
ID= -1A
pF
VDS= -15V,
VGS=0,
f =1MHz
ns
VDS= -15V,
RL=15Ω,
VGS= -10V,
RG=3Ω
Dynamic
Total Gate Charge
2
Qg
-
5.06
-
Gate-Source Charge
Qgs
-
0.72
-
Gate-Drain (‘‘Miller’’)Charge
Qgd
-
1.58
-
Input Capacitance
Ciss
-
409
-
Output Capacitance
Coss
-
55
-
Reverse Transfer Capacitance
Crss
-
42
-
td(on)
-
6.2
-
tr
-
3.2
-
td(off)
-
41.2
-
tf
-
14.5
-
Turn-On Time 2
Turn-Off Time
Source-Drain Diode
Diode Forward Voltage
2
VSD
-
-
-1
V
IS= -1A,VGS=0
Reverse Recovery Time 2
TRR
-
13.2
-
nS
Reverse Recovery Charge
Qrr
-
5.4
-
nC
IS=-1A,VGS=0,
dl/dt=100A / μS
Continuous Source Current (Body Diode)
IS
-
-
-0.5
A
VD= VG=0, VS= -1V
Note:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300μs, duty cycle≦2%.
3. Surface mounted on FR4 board, t.≦10sec
http://www.SeCoSGmbH.com/
18-Oct-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
SSF7401
Elektronische Bauelemente
-30V , -2A
P-Ch Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
18-Oct-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
SSF7401
Elektronische Bauelemente
-30V , -2A
P-Ch Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
18-Oct-2011 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4