SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS®4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 707 A Tc = 80 °C 529 A 600 A VGES tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SKM600GA12E4 Tj = 175 °C IFnom Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz IFRM IFRM = 3xIFnom 1800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 3240 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° • Short circuit: Soft Turn-off recommended RGoff > 20 Ω • With RG = 2 Ω the RBSOA is limited to 1 x ICnom = 600 A A °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE Tj = 25 °C 1.7 1.9 mΩ IGBT VCE(sat) Remarks AC sinus 50Hz, t = 1 min 500 -40 ... 125 IC = 600 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 °C VGE(th) VGE=VCE, IC = 24 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C td(on) Eoff VCC = 600 V IC = 600 A VGE = ±15 V RG on = 2 Ω RG off = 2 Ω di/dton = 6000 A/µs di/dtoff = 5200 A/µs Rth(j-c) per IGBT tr Eon td(off) tf Tj = 25 °C 5 2.5 2.7 mΩ 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C mA f = 1 MHz 37.2 nF f = 1 MHz 2.32 nF f = 1 MHz 2.04 nF 3400 nC 1.3 Ω Tj = 150 °C 195 ns Tj = 150 °C 90 ns Tj = 150 °C 74 mJ Tj = 150 °C 690 ns Tj = 150 °C 130 ns Tj = 150 °C 84 mJ 0.049 K/W GA © by SEMIKRON Rev. 0 – 19.02.2009 1 SKM600GA12E4 Characteristics Symbol SEMITRANS®4 rF IRRM Qrr IGBT4 Modules Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 Err Rth(j-c) min. typ. max. Unit Tj = 25 °C 2.14 2.46 V Tj = 150 °C 2.07 2.38 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 1.4 1.6 mΩ 1.9 2.1 mΩ Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 5500 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per diode 420 A 92 µC 38 mJ 0.086 K/W Module SKM600GA12E4 LCE RCC'+EE' Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 20 nH TC = 25 °C 0.18 mΩ TC = 125 °C 0.22 mΩ 0.02 to terminals M6, M4 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 330 g Typical Applications • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° • Short circuit: Soft Turn-off recommended RGoff > 20 Ω • With RG = 2 Ω the RBSOA is limited to 1 x ICnom = 600 A GA 2 Rev. 0 – 19.02.2009 © by SEMIKRON SKM600GA12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 19.02.2009 3 SKM600GA12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 0 – 19.02.2009 © by SEMIKRON SKM600GA12E4 Semitrans 4 GA This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 0 – 19.02.2009 5