SEMIKRON SKM600GA12E4

SKM600GA12E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
1200
V
Tc = 25 °C
916
A
Tc = 80 °C
704
A
600
A
ICnom
ICRM
SEMITRANS®4
IGBT4 Modules
ICRM = 3xICnom
1800
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
707
A
Tc = 80 °C
529
A
600
A
VGES
tpsc
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
Tj
Inverse diode
IF
SKM600GA12E4
Tj = 175 °C
IFnom
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
IFRM
IFRM = 3xIFnom
1800
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
3240
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
• Short circuit: Soft Turn-off
recommended RGoff > 20 Ω
• With RG = 2 Ω the RBSOA is limited to
1 x ICnom = 600 A
A
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.8
2.05
V
Tj = 150 °C
2.2
2.4
V
VCE0
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
rCE
Tj = 25 °C
1.7
1.9
mΩ
IGBT
VCE(sat)
Remarks
AC sinus 50Hz, t = 1 min
500
-40 ... 125
IC = 600 A
VGE = 15 V
chiplevel
VGE = 15 V
Tj = 150 °C
VGE(th)
VGE=VCE, IC = 24 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
Eoff
VCC = 600 V
IC = 600 A
VGE = ±15 V
RG on = 2 Ω
RG off = 2 Ω
di/dton = 6000 A/µs
di/dtoff = 5200 A/µs
Rth(j-c)
per IGBT
tr
Eon
td(off)
tf
Tj = 25 °C
5
2.5
2.7
mΩ
5.8
6.5
V
0.1
0.3
mA
Tj = 150 °C
mA
f = 1 MHz
37.2
nF
f = 1 MHz
2.32
nF
f = 1 MHz
2.04
nF
3400
nC
1.3
Ω
Tj = 150 °C
195
ns
Tj = 150 °C
90
ns
Tj = 150 °C
74
mJ
Tj = 150 °C
690
ns
Tj = 150 °C
130
ns
Tj = 150 °C
84
mJ
0.049
K/W
GA
© by SEMIKRON
Rev. 0 – 19.02.2009
1
SKM600GA12E4
Characteristics
Symbol
SEMITRANS®4
rF
IRRM
Qrr
IGBT4 Modules
Conditions
Inverse diode
VF = VEC IF = 600 A
VGE = 0 V
chip
VF0
Err
Rth(j-c)
min.
typ.
max.
Unit
Tj = 25 °C
2.14
2.46
V
Tj = 150 °C
2.07
2.38
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
1.4
1.6
mΩ
1.9
2.1
mΩ
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 5500 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 600 V
per diode
420
A
92
µC
38
mJ
0.086
K/W
Module
SKM600GA12E4
LCE
RCC'+EE'
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
15
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
20
nH
TC = 25 °C
0.18
mΩ
TC = 125 °C
0.22
mΩ
0.02
to terminals M6,
M4
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
330
g
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
• Short circuit: Soft Turn-off
recommended RGoff > 20 Ω
• With RG = 2 Ω the RBSOA is limited to
1 x ICnom = 600 A
GA
2
Rev. 0 – 19.02.2009
© by SEMIKRON
SKM600GA12E4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 19.02.2009
3
SKM600GA12E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: CAL diode forward characteristic
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 0 – 19.02.2009
© by SEMIKRON
SKM600GA12E4
Semitrans 4
GA
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 0 – 19.02.2009
5