2N3904 TRANSISTOR(NPN) PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25 oC unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 0.2 A 0.625 W IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 03/17/2008 Rev.1.00 www.SiliconStandard.com 1 2N3904 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 μA IEBO VEB= 5V, IC=0 0.1 μA hFE1 VCE=1V, IC=10mA 100 hFE2 VCE=1V, IC=50mA 60 hFE3 VCE=1V, IC=100mA 30 Emitter cut-off current DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA,f=100MHz Delay Time td VCC=3V,VBE=0.5V, 35 ns Rise Time tr IC=10mA,IB1=1mA 35 ns Storage Time ts VCC=3V, IC=10mA 200 ns Fall Time tf IB1=IB2=1mA 50 ns CLASSIFICATION Rank Range 03/17/2008 Rev.1.00 OF 300 MHZ hFE1 O Y G 100-200 200-300 300-400 www.SiliconStandard.com 2 2N3904 TYPICAL CHARACTERISTICS 03/17/2008 Rev.1.00 www.SiliconStandard.com 3 2N3904 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 03/17/2008 Rev.1.00 www.SiliconStandard.com 4