INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 PRECISION, LOW POWER INSTRUMENTATION AMPLIFIERS Check for Samples: INA128-HT, INA129-HT FEATURES (1) 1 • • • • • • Low Offset Voltage Low Input Bias Current: 50 nA Typ High CMR: 95 dB Typ Inputs Protected to ±40 V Wide Supply Range: ±2.25 V to ±18 V Low Quiescent Current: 2 mA Typ (1) • • • • • • • • APPLICATIONS • • • • • SUPPORTS EXTREME TEMPERATURE APPLICATIONS Bridge Amplifier Thermocouple Amplifier RTD Sensor Amplifier Medical Instrumentation Data Acquisition Typical values for 210°C application (2) Controlled Baseline One Assembly/Test Site One Fabrication Site Available in Extreme (–55°C/210°C) Temperature Range (2) Extended Product Life Cycle Extended Product-Change Notification Product Traceability Texas Instruments' high temperature products utilize highly optimized silicon (die) solutions with design and process enhancements to maximize performance over extended temperatures. Custom temperature ranges available D, JD OR HKJ PACKAGE (TOP VIEW) RG 1 8 RG V- IN 2 7 V+ V+IN 3 6 VO V- 4 5 Ref HKQ PACKAGE (TOP VIEW) RG 8 1 RG V+ V- IN VO V+IN Ref 5 V- 4 HKQ as formed or HKJ mounted dead bug DESCRIPTION The INA128 and INA129 are low power, general purpose instrumentation amplifiers offering excellent accuracy. The versatile three operational amplifier design and small size make them ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain. A single external resistor sets any gain from 1 to 10,000. The INA128 provides an industry-standard gain equation; the INA129 gain equation is compatible with the AD620. The INA128/INA129 is laser trimmed for very low offset voltage (50 μV) and high common-mode rejection (93 dB at G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current of 2 mA - typically. Internal input protection can withstand up to ±40 V without damage. The INA129 is available in 8-pin ceramic DIP and 8-pin ceramic surface-mount packages, specified for the –55°C to 210°C temperature range. The INA128 is available in an 8-pin SO-8 surface-mount package, specified for the –55°C to 175°C temperature range. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010–2012, Texas Instruments Incorporated INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com V+ INA128: 7 50 kW RG G=1+ INA128, INA129 2 VIN Over-Voltage Protection INA129: A1 40 kW 1 G=1+ 40 kW (1) 49.4 kW RG 25 kW 6 A3 RG 8 VO (1) 25 kW + VIN 3 5 A2 Over-Voltage Protection 40 kW Ref 40 kW 4 V- NOTE: (1) INA129: 24.7 kW ORDERING INFORMATION TA PACKAGE ORDERABLE PART NUMBER TOP-SIDE MARKING HKJ INA129SHKJ INA129SHKJ HKQ INA129SHKQ INA129SHKQ KGD INA129SKGD1 NA JD INA129SJD INA129SJD D INA128HD 128HD –55°C to 210°C –55°C to 175°C BARE DIE INFORMATION DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION 15 mils Silicon with backgrind GND Al-Si-Cu (0.5%) Origin a c b d 2 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 Table 1. Bond Pad Coordinates in Microns DISCRIPTION PAD NUMBER a b c d NC 1 -57.4 -31.1 -53.3 -27 V-IN 2 -9.85 -31.4 -5.75 -27.3 V+IN 3 25.05 -31.4 29.15 -27.3 V- 4 56.2 -34.3 60.3 -30.2 Ref 5 53.75 -17.6 57.85 -11 VO 6 50.35 27.8 56.95 31.9 V+ 7 7.75 30.2 11.85 34.3 NC 8 -57.4 28.4 -53.3 32.5 RG 9 -57.4 13.4 -53.3 20 RG 10 -57.5 2.7 -53.4 9.3 RG 11 -57.5 -7.9 -53.4 -1.3 RG 12 -57.4 -18.6 -53.3 -12 NC RG RG RG RG NC PAD #1 V-IN V+ V+IN VO V- Ref Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT Submit Documentation Feedback 3 INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VS VALUE UNIT Supply voltage ±18 V Analog input voltage range ±40 Output short-circuit (to ground) TA Operating temperature TSTG Storage temperature range HKJ, HKQ, KGD and JD packages –55 to 210 D package –55 to 175 HKJ, HKQ, KGD and JD packages –55 to 210 D package –55 to 175 Lead temperature (soldering, 10s) (1) V Continuous °C °C 300 °C Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. THERMAL CHARACTERISTICS FOR D PACKAGE INA128 THERMAL METRIC (1) D UNITS 8 PINS θJA Junction-to-ambient thermal resistance (2) 110 θJCtop Junction-to-case (top) thermal resistance (3) 57 θJB Junction-to-board thermal resistance (4) 54 (5) ψJT Junction-to-top characterization parameter ψJB Junction-to-board characterization parameter (6) 53 θJCbot Junction-to-case (bottom) thermal resistance (7) N/A (1) (2) (3) (4) (5) (6) (7) °C/W 11 For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. XXX THERMAL CHARACTERISTICS FOR JD PACKAGE over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS High-K board MIN (2) , no airflow TYP 64.9 MAX UNIT θJA Junction-to-ambient thermal resistance (1) θJB Junction-to-board thermal resistance High-K board without underfill 27.9 °C/W θJC Junction-to-case thermal resistance 6.49 °C/W (1) (2) 4 No airflow 83.4 °C/W The intent of θJA specification is solely for a thermal performance comparison of one package to another in a standardized environment. This methodology is not meant to and will not predict the performance of a package in an application-specific environment. JED51-7, high effective thermal conductivity test board for leaded surface mount packages Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 THERMAL CHARACTERISTICS FOR HKJ OR HKQ PACKAGE over operating free-air temperature range (unless otherwise noted) PARAMETER θJC MIN TYP to ceramic side of case Junction-to-case thermal resistance MAX UNIT 5.7 to top of case lid (metal side of case) °C/W 13.7 ELECTRICAL CHARACTERISTICS FOR INA128 TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted) PARAMETER TA = 175°C (1) TA = –55°C to 125°C TEST CONDITIONS MIN MIN TYP UNIT TYP MAX MAX ±25 ±100/G ±125 ±1000/G ±0.2 ±5/G ±1 ±20/G ±3.5 ±80/G µV/°C ±2 ±200/G ±5 ±500/G µV/V INPUT OFFSET VOLTAGE, RTI Initial TA = 25°C vs temperature TA = TMIN to TMAX vs power supply VS = ±2.25 V to ±18 V Long-term stability ±1 ±3/G 10 Impedance, differential 10 ±1 ±3/G 10 || 2 VO = 0 V (V+) − 2 (V+) − 1.4 (V−) + 2 (V−) + 1.7 Safe input voltage µV/mo || 2 Ω || pF 1011||9 Ω || pF 10 1011||9 Common mode Common mode voltage range (2) µV (V+) − 2 (V+) − 1.4 (V−) + 2 (V−) + 1.7 ±40 V V ±40 V VCM = ±13 V, ΔRS = 1 kΩ Common-mode rejection G=1 58 86 58 G = 10 78 106 78 75 85 G = 100 99 125 99 110 G = 1000 113 130 113 120 dB CURRENT Bias current ±2 vs temperature ±10 ±30 Offset Current ±1 vs temperature ±45 ±550 ±10 nA pA/°C ±45 nA ±30 ±550 pA/°C f = 10 Hz 10 10 nV/√Hz f = 100 Hz 8 8 nV/√Hz f = 1 kHz 8 8 nV/√Hz 0.2 0.8 NOISE Noise voltage, RTI G = 1000, RS = 0 Ω fB = 0.1 Hz to 10 Hz µVPP Noise current (1) (2) f = 10 Hz 0.9 pA/√Hz f = 1 kHz 0.3 pA/√Hz fB = 0.1 Hz to 10 Hz 30 pAPP Minimum and maximum parameters are characterized for operation at TA = 175°C, but may not be production tested at that temperature. Production test limits with statistical guardbands are used to ensure high temperature performance. Input common-mode range varies with output voltage — see typical curves. Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT Submit Documentation Feedback 5 INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com ELECTRICAL CHARACTERISTICS FOR INA128 (continued) TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted) PARAMETER TA = 175°C (1) TA = –55°C to 125°C TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT GAIN 1+ (50 kΩ/RG) Gain equation Range of gain Gain error Gain vs temperature (3) 1 10000 1 V/V 10000 V/V G=1 ±0.01 ±0.1 ±0.1 ±0.5 G = 10 ±0.02 ±0.5 ±0.5 ±1 G = 100 ±0.05 ±0.7 ±0.7 ±1.5 G = 1000 ±0.5 ±2.5 ±2 ±4 ±1 ±10 ±75 ppm/°C ±25 ±100 ±75 ppm/°C VO = ±13.6 V, G=1 ±0.0001 ±0.001 ±0.008 G = 10 ±0.0003 ±0.002 ±0.010 G = 100 ±0.0005 G = 1000 ±0.001 G=1 50-kΩ resistance (3) (4) Nonlinearity 1+ (50 kΩ/RG) ±0.002 See ±0.010 (5) ±0.6 See % % of FSR (5) OUTPUT Voltage Positive RL = 10kΩ (V+) − 1.4 (V+) − 0.9 (V+) − 1.4 (V+) − 0.9 Negative RL = 10kΩ (V−) + 1.4 (V−) + 0.8 (V−) + 1.4 (V−) + 0.8 Load capacitance stability Short-curcuit current V 1000 1000 pF +6/−15 +6/−15 mA FREQUENCY RESPONSE Bandwidth, −3 dB Slew rate Settling time, 0.01% Overload recovery G=1 1300 1100 G = 10 700 700 G = 100 200 190 G = 1000 20 17.5 VO = ±10 V, G = 10 4 4 G=1 7 7 G = 10 7 7 G = 100 9 9 G = 1000 80 80 50% overdrive 4 4 kHz V/µs µs µs POWER SUPPLY Voltage range Current, total ±2.25 VIN = 0 V ±15 ±18 ±18 V ±0.7 ±1 ±2.25 ±15 ±1 mA TEMPERATURE RANGE Specification −55 125 175 °C Operating −55 125 175 °C (3) (4) (5) 6 Specified by wafer test. Temperature coefficient of the 50-kΩ term in the gain equation. Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%. Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 ELECTRICAL CHARACTERISTICS FOR INA129 over operating free-air temperature range (unless otherwise noted) PARAMETER TA = 210°C (1) TA = –55°C to 125°C TEST CONDITIONS MIN TYP MAX ±25 ±100/G ±125 ±1000/G MIN TYP UNIT MAX INPUT OFFSET VOLTAGE, RTI Initial TA = 25°C µV vs temperature TA = TMIN to TMAX ±0.2 ±5/G ±1 ±20/G ±1 ±850/G µV/°C vs power supply VS = ±2.25 V to ±18 V ±0.2 ±20/G ±2 ±200/G ±20 ±1000/G µV/V Long-term stability ±1 ±3/G ±1 ±3/G µV/mo Impedance, differential 1010 || 2 1010 || 2 Ω || pF 1011||9 1011||9 Ω || pF Common mode Common mode voltage range (2) VO = 0 V (V+) − 2 (V+) − 1.4 (V−) + 2 (V−) + 1.7 Safe input voltage (V+) − 2 (V+) − 1.4 (V−) + 2 (V−) + 1.7 ±40 V V ±40 V VCM = ±13 V, ΔRS = 1 kΩ Common-mode rejection G=1 58 86 53 G = 10 78 106 69 G = 100 99 125 89 G = 1000 113 130 95 dB CURRENT Bias current ±2 vs temperature ±10 ±30 Offset Current ±1 nA pA/°C ±50 nA ±30 ±600 pA/°C f = 10 Hz 10 25 nV/√Hz f = 100 Hz 8 20 nV/√Hz f = 1 kHz 8 20 nV/√Hz 0.2 2 µVPP vs temperature ±10 ±50 ±600 NOISE Noise voltage, RTI G = 1000, RS = 0 Ω fB = 0.1 Hz to 10 Hz Noise current (1) (2) f = 10 Hz 0.9 pA/√Hz f = 1 kHz 0.3 pA/√Hz fB = 0.1 Hz to 10 Hz 30 pAPP Minimum and maximum parameters are characterized for operation at TA = 210°C, but may not be production tested at that temperature. Production test limits with statistical guardbands are used to ensure high temperature performance. Input common-mode range varies with output voltage — see typical curves. Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT Submit Documentation Feedback 7 INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com ELECTRICAL CHARACTERISTICS FOR INA129 (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TA = 210°C (1) TA = –55°C to 125°C TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT GAIN 1+ (49.4 kΩ/RG) Gain equation Range of gain Gain error Gain vs temperature (3) 1 10000 1 V/V 10000 V/V G=1 ±0.01 ±0.1 ±1.1 G = 10 ±0.02 ±0.5 ±2.6 G = 100 ±0.05 ±0.7 ±13.5 G = 1000 ±0.5 ±2.5 ±65.5 ±1 ±10 ±100 ppm/°C ±25 ±100 ±100 ppm/°C VO = ±13.6 V, G=1 ±0.0001 ±0.001 ±0.1 G = 10 ±0.0003 ±0.002 ±0.2 G = 100 ±0.0005 ±0.002 ±0.7 G = 1000 ±0.001 (5) ±2.4 G=1 49.4-kΩ resistance (3) (4) Nonlinearity 1+ (49.4 kΩ/RG) See % % of FSR See (5) OUTPUT Voltage Positive RL = 10kΩ (V+) − 1.4 (V+) − 0.9 (V+) − 1.4 (V+) − 0.9 Negative RL = 10kΩ (V−) + 1.4 (V−) + 0.8 (V−) + 1.4 (V−) + 0.8 Load capacitance stability Short-curcuit current V 1000 1000 pF +6/−15 +12/−5 mA FREQUENCY RESPONSE Bandwidth, −3 dB Slew rate Settling time, 0.01% Overload recovery G=1 1300 850 G = 10 700 400 G = 100 200 50 G = 1000 20 7.5 VO = ±10 V, G = 10 4 4 G=1 7 10 G = 10 7 10 G = 100 9 30 G = 1000 80 150 50% overdrive 4 4 kHz V/µs µs µs POWER SUPPLY Voltage range Current, total ±2.25 VIN = 0 V ±15 ±18 ±0.7 ±1 ±2.25 ±15 ±18 ±2 V mA TEMPERATURE RANGE Specification −55 125 210 °C Operating −55 125 210 °C (3) (4) (5) 8 Specified by wafer test. Temperature coefficient of the 49.4-kΩ term in the gain equation. Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%. Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 Estimated Life (Hours) 1000000 100000 Electromigration Fail Mode 10000 Wirebond Failure Mode 1000 110 120 130 140 150 160 170 180 190 200 210 Continuous TJ (°C) (1) See the data sheet for absolute maximum and minimum recommended operating conditions. (2) The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the dominant failure mechanism affecting device wearout for the specific device process and design characterisitics. (3) Wirebond lifetime is only applicable for D package. Figure 1. INA128HD/INA129SKGD1 Operating Life Derating Chart Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT Submit Documentation Feedback 9 INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com TYPICAL CHARACTERISTICS At TA = 25°C, VS = ±15 V, unless otherwise noted. GAIN vs FREQUENCY COMMON-MODE REJECTION vs FREQUENCY 140 60 G =1000V/V G =100V/V G = 1000V/V Common-Mode Rejection (dB) 50 40 Gain (dB) G = 100V/V 30 20 G = 10V/V 10 0 G = 1V/V − 10 − 20 120 G =10V/V 100 G =1V/V 80 60 40 20 0 1k 10k 100k 1M 10M 10 100 Frequency (Hz) 1k 10k 100k 1M Frequency (Hz) Figure 2. Figure 3. POSITIVE POWER SUPPLY REJECTION vs FREQUENCY NEGATIVE POWER SUPPLY REJECTION vs FREQUENCY 140 140 120 120 Power Supply Rejection (dB) Power Supply Rejection (dB) G = 1000V/V G =1000V/V 100 G =100V/V 80 60 G= 10V/V 40 G=1V/V 20 0 10 100 1k 10k 100k 1M G =100V/V 100 80 60 G=10V/V 40 G=1V/V 20 0 10 Frequency (Hz) Frequency (Hz) Figure 4. 10 Submit Documentation Feedback Figure 5. Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. INPUT COMMON-MODE RANGE vs OUTPUT VOLTAGE (VS = ±15 V) INPUT COMMON-MODE RANGE vs OUTPUT VOLTAGE (VS = ±5 V, ±2.5 V) 5 15 G ≥ 10 G=1 G=1 5 +15V VD/2 0 VD/2 5 + VO Ref + VCM -15V 10 G ≥ 10 G ≥ 10 4 10 Common-Mode Voltage (V) Common-Mode Voltage (V) G ≥ 10 3 G=1 2 G=1 G ≥ 10 1 0 G=1 1 2 3 VS = ±5V VS = ±2.5V 4 5 15 -15 -10 0 -5 5 10 -5 15 -4 -3 -1 -2 1 2 Figure 6. Figure 7. INPUT-REFERRED NOISE vs FREQUENCY SETTLING TIME vs GAIN 1k ¾ Input Bias Current Noise (pA/√Hz) 100 10 G =10V/V 10 1 G =100, 1000V/V Current Noise 1 0.1 10 100 5 4 1k 10k 0.01% Settling Time (ms) G = 1V / V 1 3 100 100 ¾ Input-Referred Voltage Noise (nV/√Hz) 0 Output Voltage (V) Output Voltage (V) 0.1% 10 1 1 10 100 1000 Gain (V/V) Frequency (Hz) Figure 8. Figure 9. Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT Submit Documentation Feedback 11 INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. QUIESCENT CURRENT AND SLEW RATE vs TEMPERATURE INPUT OVER-VOLTAGE V/I CHARACTERISTICS 4.5 5 4 4 3.5 3 3 2 1.5 2.5 2 1 1.5 IQ 0.5 1 0 -55 -25 0 Input Current (mA) Slew Rate 2 Slew Rate (V/µS) Quiescent Current (mA) 2.5 25 50 75 100 125 155 190 Flat region represents normal linear operation. G = 1V / V 0 1 +15V G=1V/V 2 3 0.5 4 0 5 210 VIN G = 1000V/V -50 -40 -30 -20 Temperature (°C) -10 0 IIN 15V 10 Figure 10. Figure 11. INPUT OFFSET VOLTAGE WARM-UP INPUT BIAS CURRENT vs TEMPERATURE 10 33 8 28 6 4 40 50 2 0 -2 -4 -6 190 210 23 18 13 IB 8 3 I OS -8 -2 -10 0 100 200 300 400 500 -50 -25 0 Time (ms) Submit Documentation Feedback 25 50 75 100 125 150 Temperature (°C) Figure 12. 12 30 20 Input Voltage (V) Input Bias Current (nA) Offset Voltage Change (mV) G = 1000V/V 1 Figure 13. Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. OUTPUT VOLTAGE SWING vs POWER SUPPLY VOLTAGE (V+) (V+) (V+)-0.4 (V+)-0.4 Output Voltage Swing (V) Output Voltage (V) OUTPUT VOLTAGE SWING vs OUTPUT CURRENT (V+)-0.8 (V+)-1.2 (V-)+1.2 (V-)+0.8 +25°C (V+)-0.8 (V+)-1.2 -40 °C RL = 10 k Ω +25°C (V-)+1.2 -40 °C +85°C (V-)+0.8 +85°C -40 °C (V-)+0.4 (V-)+0.4 (V-) (V-) 0 1 2 3 0 4 5 10 15 20 Power Supply Voltage (V) Output Current (mA) Figure 14. Figure 15. SHORT-CIRCUIT OUTPUT CURRENT vs TEMPERATURE MAXIMUM OUTPUT VOLTAGE vs FREQUENCY 30 18 G =10, 100 -I SC Peak-to-Peak Output Voltage (VPP) 16 Short-Circuit Current (mA) +85°C 14 12 10 8 6 +I SC 4 2 0 25 G=1 G = 1000 20 15 10 5 0 -50 -25 0 25 50 75 100 125 190 210 1k Temperature (°C) 10k 100k 1M Frequency (Hz) Figure 16. Figure 17. Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT Submit Documentation Feedback 13 INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY SMALL SIGNAL (G = 1, 10) 1 TH D + N (% ) VO = 1 V r m s 500kHz Measurement Bandwidth 0.1 G=1 RL = 10kW G=1 G =100, RL = 100kW 20mV/div 0.01 G =10V/V RL = 100kW G =1, RL = 100kW Dashed Portion is noise limited. 0.001 100 10k 1k G = 10 100k 5ms/div Frequency (Hz) Figure 18. Figure 19. SMALL SIGNAL (G = 100, 1000) LARGE SIGNAL (G = 1, 10) G = 10 0 G=1 20mV/div 5V/div G = 10 0 0 G = 10 5ms/div 20ms/div Figure 20. Figure 21. LARGE SIGNAL (G = 100, 1000) VOLTAGE NOISE 0.1 Hz TO 10 Hz INPUT-REFERRED, G ≥ 100 G =100 5V/div 0.1mV/div G =1000 20ms/div 1s/div Figure 22. 14 Submit Documentation Feedback Figure 23. Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 APPLICATION INFORMATION Figure 24 shows the basic connections required for operation of the INA128/INA129. Applications with noisy or high impedance power supplies may require decoupling capacitors close to the device pins as shown. The output is referred to the output reference (Ref) terminal which is normally grounded. This must be a lowimpedance connection to assure good common-mode rejection. A resistance of 8 Ω in series with the Ref pin will cause a typical device to degrade. Setting the Gain Gain is set by connecting a single external resistor, RG, between pins 1 and 8. INA128: 50 kW G=1+ ¾ RG (1) INA129: 49.4 kW G=1+ ¾ RG (2) Commonly used gains and resistor values are shown in Figure 24. The 50-kΩ term in Equation 1 (49.4-kΩ in Equation 2) comes from the sum of the two internal feedback resistors of A1 and A2. These on-chip metal film resistors are laser trimmed to accurate absolute values. The accuracy and temperature coefficient of these internal resistors are included in the gain accuracy and drift specifications of the INA128/INA129. The stability and temperature drift of the external gain setting resistor, RG, also affects gain. RG’s contribution to gain accuracy and drift can be directly inferred from Equation 2. Low resistor values required for high gain can make wiring resistance important. Sockets add to the wiring resistance which will contribute additional gain error (possibly an unstable gain error) in gains of approximately 100 or greater. V+ INA129: INA128: G=1+ 50 kW RG G=1+ 0.1mF 49.4kW RG 7 INA128, INA129 INA128 DESIRED GAIN (V/V) 1 2 5 10 20 50 100 200 500 1000 2000 5000 10000 INA129 RG (W) NEAREST 1% RG (W) NC 50K 12.5K 5.556K 2.632K 1.02K 505.1 251.3 100.2 50.5 25.01 10 5.001 NC 49.9K 12.4K 5.62K 2.61K 1.02K 511 249 100 49.9 24.9 10 4.99 RG (W) NC 49.4K 12.35K 5489 2600 1008 499 248 99 49.5 24.7 9.88 4.94 VIN NEAREST 1% RG (W) NC 49.9K 12.4K 5.49K 2.61K 1K 499 249 100 49.9 24.9 9.76 4.87 2 Over Voltage Protection A1 40kΩ 1 40kΩ VO = G · (VIN+ - VIN-) 25kΩ(1) A3 RG + 8 + VIN 3 6 25kΩ(1) Load VO A2 Over Voltage Protection 40kΩ 4 NOTE: (1) INA129: 24.7kW 40kΩ 5 Ref 0.1mF NC: No Connection V IN V Also drawn in simplified form: RG + V IN INA1 28 VO Ref Figure 24. Basic Connections Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT Submit Documentation Feedback 15 INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com Dynamic Performance Figure 2 shows that, despite its low quiescent current, the INA128/INA129 achieves wide bandwidth, even at high gain. This is due to the current-feedback topology of the input stage circuitry. Settling time also remains excellent at high gain. Noise Performance The INA128/INA129 provides very low noise in most applications. Low frequency noise is approximately 2 μVPP measured from 0.1 Hz to 10 Hz (G ≥ 100). This provides dramatically improved noise when compared to stateof-the-art chopper-stabilized amplifiers. Offset Trimming The INA128/INA129 is laser trimmed for low offset voltage and offset voltage drift. Most applications require no external offset adjustment. Figure 25 shows an optional circuit for trimming the output offset voltage. The voltage applied to Ref terminal is summed with the output. The operational amplifier buffer provides low impedance at the Ref terminal to preserve good common-mode rejection. VIN V+ RG + VIN INA129 VO 100mA 1/2 REF200 Ref OPA177 ±10mV Adjustment Range 10kW 100W 100W 100mA 1/2 REF200 V- (1) OPA177 and REF200 are not tested or characterized at 210°C. Figure 25. Optional Trimming of Output Offset Voltage Input Bias Current Return Path The input impedance of the INA128/INA129 is extremely high (approximately 1010 Ω). However, a path must be provided for the input bias current of both inputs. This input bias current is approximately ±50 nA. High input impedance means that this input bias current changes very little with varying input voltage. Input circuitry must provide a path for this input bias current for proper operation. Figure 26 shows various provisions for an input bias current path. Without a bias current path, the inputs will float to a potential which exceeds the common-mode range, and the input amplifiers will saturate. If the differential source resistance is low, the bias current return path can be connected to one input (see the thermocouple example in Figure 26). With higher source impedance, using two equal resistors provides a balanced input with possible advantages of lower input offset voltage due to bias current and better highfrequency common-mode rejection. 16 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 Microphone, Hydrophone etc. INA129 47kW 47kW Thermocouple INA129 10kW INA129 Center-tap provides bias current return. Figure 26. Providing an Input Common-Mode Current Path Input Common-Mode Range The linear input voltage range of the input circuitry of the INA128/INA129 is from approximately 1.4 V below the positive supply voltage to 1.7 V above the negative supply. As a differential input voltage causes the output voltage increase, however, the linear input range will be limited by the output voltage swing of amplifiers A1 and A2. So the linear common-mode input range is related to the output voltage of the complete amplifier. This behavior also depends on supply voltage (see Figure 6 and Figure 7). Input-overload can produce an output voltage that appears normal. For example, if an input overload condition drives both input amplifiers to their positive output swing limit, the difference voltage measured by the output amplifier will be near zero. The output of A3 will be near 0 V even though both inputs are overloaded. Low Voltage Operation The INA128/INA129 can be operated on power supplies as low as ±2.25 V. Performance remains excellent with power supplies ranging from ±2.25 V to ±18 V. Most parameters vary only slightly throughout this supply voltage range. Operation at very low supply voltage requires careful attention to assure that the input voltages remain within their linear range. Voltage swing requirements of internal nodes limit the input common-mode range with low power supply voltage. Figure 6 and Figure 7 show the range of linear operation for ±15 V, ±5 V, and ±2.5 V supplies. Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT Submit Documentation Feedback 17 INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com +5V 2.5V - ∆V RG 300W VO INA129 Ref 2.5V + ∆V Figure 27. Bridge Amplifier VIN + VO RG INA129 Ref C1 0.1mF OPA130 R1 1MW 1 f-3dB = 2pR1C1 = 1.59 Hz (1) OPA130 is not tested or characterized at 210°C. Figure 28. AC-Coupled Instrumentation Amplifier 18 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT INA128-HT, INA129-HT www.ti.com SBOS501D – JANUARY 2010 – REVISED JUNE 2012 V+ 10.0V 6 REF102 R1 2 R2 4 Pt100 Cu K VO Cu RG INA129 Ref R3 100Ω = Pt100 at 0°C ISA TYPE MATERIAL +Chromel -Constantan +Iron -Constantan +Chromel -Alumel +Copper -Constantan E J K T (1) SEEBECK COEFFICIENT (mV/°C) R1, R2 58.5 66.5kW 50.2 76.8kW 39.4 97.6kW 38 102kW REF102 is not tested or characterized at 210°C. Figure 29. Thermocouple Amplifier With RTD Cold-Junction Compensation VIN IO = R1 RG INA129 V IN ·G R1 + Ref IB A1 (1) A1 IB ERROR OPA177 ± 1.5 nA OPA131 ± 50 pA OPA602 ± 1 pA OPA128 ± 75 fA IO Load OPA177, OPA131, OPA602 and OPA128 are not tested or characterized at 210°C. Figure 30. Differential Voltage to Current Converter Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT Submit Documentation Feedback 19 INA128-HT, INA129-HT SBOS501D – JANUARY 2010 – REVISED JUNE 2012 www.ti.com RG = 5.6kW 2.8kW G = 10 LA RA RG/2 INA129 VO Ref 2.8kW 390kW 1/2 OPA2131 RL VG 10kW 390kW (1) VG 1/2 OPA2131 NOTE: Due to the INA129’s current-feedback topology, VG is approximately 0.7 V less than the common-mode input voltage. This DC offset in this guard potential is satisfactory for many guarding applications. OPA2131 is not tested or characterized at 210°C. Figure 31. ECG Amplifier With Right-Leg Drive 20 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): INA128-HT INA129-HT PACKAGE OPTION ADDENDUM www.ti.com 29-Aug-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing INA128HD ACTIVE SOIC Pins Package Qty D 8 50 Green (RoHS & no Sb/Br) Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) CU NIPDAU Level-3-260C-168 HR INA129SHKJ ACTIVE CFP HKJ 8 1 TBD Call TI N / A for Pkg Type INA129SHKQ ACTIVE CFP HKQ 8 1 TBD AU N / A for Pkg Type INA129SJD ACTIVE CDIP SB JDJ 8 1 TBD INA129SKGD1 ACTIVE XCEPT KGD 0 180 TBD POST-PLATE N / A for Pkg Type Call TI N / A for Pkg Type (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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OTHER QUALIFIED VERSIONS OF INA128-HT, INA129-HT : Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 29-Aug-2012 • Catalog: INA128, INA129 • Enhanced Product: INA129-EP NOTE: Qualified Version Definitions: • Catalog - TI's standard catalog product • Enhanced Product - Supports Defense, Aerospace and Medical Applications Addendum-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. 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