DC COMPONENTS CO., LTD. 2SC1674 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for TV PIF, FM tuner RF amplifier, mixer, and oscillator applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating .022(0.56) .014(0.36) Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 mA Total Power Dissipation PD 150 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 30 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=5mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 4 - - V IE=10µA, IC=0 IC=10µA, IE=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=30V, IE=0 Emitter Cutoff Current IEBO - - 0.1 µA VEB=4V, IC=0 VCE(sat) - 0.1 0.3 V IC=10mA, IB=1mA VBE(on) - 0.72 - V IC=1mA, VCE=6V hFE 40 - 240 - IC=1mA, VCE=6V Transition Frequency fT 400 600 - MHz Output Capacitance Cob - - 1.3 pF (1) Collector-Emitter Saturation Voltage (1) Base-Emitter On Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE Rank R O Y Range 40~80 70~140 120~240 IC=1mA, VCE=6V VCB=6V, f=1MHz, IE=0