DC COMPONENTS CO., LTD. 2SA1300 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use Strobe flash and medium power amplifier applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) o Absolute Maximum Ratings(TA=25 Characteristic C) o 2 Typ Symbol Rating Unit VCBO -20 V Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCES -20 V VCEO -10 V VEBO -6 V Collector Current (DC) IC -2 A Collector Current (pulse) IC -5 A .022(0.56) .014(0.36) IB -2 A PD 750 mW Junction Temperature TJ +150 o -55 to +150 o .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 Total Power Dissipation TSTG .500 Min (12.70) .050 Typ (1.27) Base Current Storage Temperature 2 Typ .190(4.83) .170(4.33) o .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Emitter Breakdown Volatge Characteristic BVCEO -10 - - V Emitter-Base Breakdown Voltage BVEBO -6 - - V IE=-1mA, IC=0 ICBO - - -100 nA VCE=-20V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain(1) IEBO - - -100 nA VBE=-6V, IC=0 VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-50mA VBE - -0.83 -1.5 V IC=-2A, VCE=-1V hFE1 140 - 1000 - IC=-0.5A, VCE=-1V hFE2 60 - - - IC=-2A, VCE=-1V Transition Frequency fT - 140 - MHz Output Capacitance Cob - 50 - pF (1)Pulse Test: Pulse Width Test Conditions IC=-10mA, IB=0 380µs, Duty Cycle 2% Classification of hFE1 Rank Y GR BL PE Range 140~280 200~400 300~600 500~1000 IC=-0.5A, VCE=-1V VCE=-10V, f=1KHz, IE=0