DCCOM BC549

DC COMPONENTS CO., LTD.
BC548
BC549
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in drive stage of audio amplifiers.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Collector
2 = Base
3 = Emitter
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
Absolute Maximum Ratings(TA=25oC)
Characteristic
.500
Min
(12.70)
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
500
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
3 2 1
.148(3.76)
.132(3.36)
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
30
-
-
V
Collector-Emitter Breakdown Volatge
BVCEO
30
-
-
V
IC=1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
V
IE=100µA, IC=0
ICBO
-
-
15
nA
VCB=30V, IE=0
Collector Cutoff Current
(1)
Test Conditions
IC=100µA, IE=0
Collector-Emitter Saturation Voltage
VCE(sat)
-
0.2
0.6
V
IC=100mA, IB=5mA
Base-Emitter Saturation Voltage(1)
VBE(sat)
-
0.9
1.1
V
IC=100mA, IB=5mA
Base-Emitter On Voltage(1)
DC Current Gain(1)
VBE(on)1
0.58
-
0.7
V
IC=2mA, VCE=5V
VBE(on)2
-
-
0.77
V
IC=10mA, VCE=5V
hFE
110
-
800
-
IC=2mA, VCE=5V
Transition Frequency
fT
-
300
-
MHz
Output Capacitance
Cob
-
3.5
6
pF
VCB=10V, f=1MHz, IE=0
-
2
10
-
1.4
4
dB
VCE=-5V, IC=-200µA, f=1KHz,
RS=2KΩ, B=200Hz
BC548
Noise Figure
BC549
(1)Pulse Test: Pulse Width
NF
380µs, Duty Cycle
2%
Classification of hFE
Rank
A
B
C
Range
110~220
200~450
420~800
IC=10mA, VCE=5V, f=100MHz