DC COMPONENTS CO., LTD. BC548 BC549 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in drive stage of audio amplifiers. TO-92 Pinning .190(4.83) .170(4.33) 1 = Collector 2 = Base 3 = Emitter o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25oC) Characteristic .500 Min (12.70) Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Total Power Dissipation PD 500 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 30 - - V Collector-Emitter Breakdown Volatge BVCEO 30 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0 ICBO - - 15 nA VCB=30V, IE=0 Collector Cutoff Current (1) Test Conditions IC=100µA, IE=0 Collector-Emitter Saturation Voltage VCE(sat) - 0.2 0.6 V IC=100mA, IB=5mA Base-Emitter Saturation Voltage(1) VBE(sat) - 0.9 1.1 V IC=100mA, IB=5mA Base-Emitter On Voltage(1) DC Current Gain(1) VBE(on)1 0.58 - 0.7 V IC=2mA, VCE=5V VBE(on)2 - - 0.77 V IC=10mA, VCE=5V hFE 110 - 800 - IC=2mA, VCE=5V Transition Frequency fT - 300 - MHz Output Capacitance Cob - 3.5 6 pF VCB=10V, f=1MHz, IE=0 - 2 10 - 1.4 4 dB VCE=-5V, IC=-200µA, f=1KHz, RS=2KΩ, B=200Hz BC548 Noise Figure BC549 (1)Pulse Test: Pulse Width NF 380µs, Duty Cycle 2% Classification of hFE Rank A B C Range 110~220 200~450 420~800 IC=10mA, VCE=5V, f=100MHz