DC COMPONENTS CO., LTD. M28S DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose "Speech Synthesizer" (Voice ROM) IC audio output driver stage amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 3 = Emitter 1 = Collector 2 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ o Absolute Maximum Ratings(TA=25 Characteristic C) .500 Min (12.70) Symbol Rating Unit VCBO 40 V Collector-Base Voltage Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V IC 1.25 A Collector Current Base Current IB 0.4 A Total Power Dissipation PD 850 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 40 - - V Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=100µA, IC=0 ICBO - - 0.1 µA VCB=35V, IE=0 Collector Cutoff Current EmitterCutoff Current Collector-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=100µA, IE=0 IEBO - - 0.1 µA VEB=6V, IC=0 VCE(sat) - - 0.55 V IC=600mA, IB=20mA hFE1 290 - - - IC=1mA, VCE=1V hFE2 300 - 1000 - IC=0.1A, VCE=1V hFE3 300 - - - IC=0.3A, VCE=1V hFE4 300 - - - fT 100 - - MHz - 9 - pF Cob 380µs, Duty Cycle 2% Classification of hFE2 Rank B C D Range 300~550 500~700 650~1000 IC=0.5A, VCE=1V IC=50mA, VCE=10V, f=1MHz VCB=10V, f=1MHz, IE=0