SUD/SUU10P06-280L Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) –60 rDS(on) () ID (A) 0.170 @ VGS = –10 V –10 0.280 @ VGS = –4.5 V –8 TO-251 S TO-252 G and DRAIN-TAB Drain Connected to Tab G D S G Top View D S D Top View Order Number: SUD10P06-280L P-Channel MOSFET Order Number: SUU10P06-280L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit VGS "20 V Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ TC = 25_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) L = 0.1 mH –20 IS –10 IAR –10 A 5 mJ 37 PD TA = 25_C Operating Junction and Storage Temperature Range –7 IDM EAR TC = 25_C Maximum Power Dissipation –10 ID TC = 100_C W 2a TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol FR4 Board Mount Junction-to-Ambienta Free Air Junction-to-Case RthJA RthJC Typical Maximum 60 70 120 140 3.7 4.0 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70780 S-20349—Rev. F, 18-Apr-02 www.vishay.com 2-1 SUD/SUU10P06-280L Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min V(BR)DSS VDS = 0 V, ID = –250 A –60 VGS(th) VDS = VGS, ID = –250 A –1.0 Typa Max –2.0 –3.0 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage IGSS V VDS = 0 V, VGS = "20 V "100 VDS = –60 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = –60 V, VGS = 0 V, TJ = 125_C –50 VDS = –60 V, VGS = 0 V, TJ = 175_C –150 VDS = –5 V, VGS = –10 V VGS = –10 V, ID = –5 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs nA –1 –10 A A 0.130 0.170 VGS = –10 V, ID = –5 A, TJ = 125_C 0.31 VGS = –10 V, ID = –5 A, TJ = 175_C 0.375 VGS = –4.5 V, ID = –2 A 0.210 VDS = –15 V, ID = –5 A 6 0.280 S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 30 Total Gate Charge Qg 11.5 Gate-Source Charge Qgs 3.5 Gate-Drain Charge Qgd Turn-On Delay Timec td(on) 9 20 tr VDD = –30 V, RL = 3 16 20 td(off) ID ] 10 A, VGEN = –10 V, RG = 2.5 17 30 19 35 Rise Timec Turn-Off Delay Timec Fall Timec 635 VDS = –25 V, VGS = 0 V, f = 1 MHz VDS = –30 V, VGS = –10 V, ID = –10 A 100 pF 25 nC 2 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)a Pulsed Current ISM Forward Voltageb VSD IF = 10 A, VGS = 0 V trr IF = 10 A, di/dt = 100 A/s Reverse Recovery Time 50 –20 A –1.3 V 80 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 s, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70780 S-20349—Rev. F, 18-Apr-02 SUD/SUU10P06-280L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 10 VGS = 10 thru 7 V 8 I D – Drain Current (A) I D – Drain Current (A) 24 6V 18 5V 12 4V 6 6 4 TC = 125_C 2 25_C –55_C 3V 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) Transconductance 4 5 15 TC = –55_C 12 25_C r DS(on) – On-Resistance ( ) 1.2 9 125_C 6 3 0 0.9 0.6 VGS = 4.5 V 0.3 VGS = 10 V 0.0 0 4 8 12 16 0 20 2 4 ID – Drain Current (A) 6 8 10 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 1000 800 C – Capacitance (pF) 3 On-Resistance vs. Drain Current 18 g fs – Transconductance (S) 2 VGS – Gate-to-Source Voltage (V) Ciss 600 400 200 Coss Crss 0 VDS = 20 V ID = 10 A 16 12 8 4 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 70780 S-20349—Rev. F, 18-Apr-02 60 0 4 8 12 16 20 24 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUD/SUU10P06-280L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance ( ) (Normalized) VGS = 10 V ID = 5 A 1.5 1.0 TJ = 150_C 10 TJ = 25_C 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Drain Current vs. Case Temperature Safe Operating Area 30 12 10 s 100 s 10 I D – Drain Current (A) I D – Drain Current (A) 9 6 3 Limited by rDS(on) 1 ms 10 ms 1 100 ms dc, 1 s TC = 25_C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 TC – Case Temperature (_C) 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70780 S-20349—Rev. F, 18-Apr-02