SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175C MOSFET V(BR)DSS (V) 30 rDS(on) () ID (A) 0.007 @ VGS = 10 V 75a 0.01 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET SUP75N03-07 Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C) TC = 25C TC = 100C Pulsed Drain Current Repetitive Avalanche Energyb L = 0.1 mH Power Dissipation TC = 25C Operating Junction and Storage Temperature Range V 75a ID 64 A IDM Avalanche Current Unit 240 IAR 75 EAR 280 PD 120c W TJ, Tstg –55 to 175 C Symbol Limit Unit mJ Parameter PCB Mount (TO-263)d Junction-to-Ambient 40 RthJA Free Air (TO-220AB) Junction-to-Case 62.5 RthJC C/W 1.25 Notes: a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70794 S-000652—Rev. D, 27-Mar-00 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB75N03-07 Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, IDS = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 30 V, VGS = 0 V, TJ = 125C 50 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 2 "100 VDS = 30 V, VGS = 0 V, TJ = 175C VDS = 5 V, VGS = 10 V Forward Transconductancea rDS(on) gfs A 0.006 0.007 VGS = 10 V, ID = 30 A, TJ = 125C 0.011 VGS = 10 V, ID = 30 A, TJ = 175C 0.015 VGS = 4.5 V, ID = 20 A 0.01 VDS = 15 V, ID = 30 A mA A 150 120 VGS = 10 V, ID = 30 A a D i S O S R i Drain-Source On-State Resistance nA 20 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs 5600 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 1100 450 70 VDS = 15 V, V VGS = 10 V, V ID = 75 A 130 nC C 18 Gate-Drain Chargec Qgd 10 Turn-On Delay Timec td(on) 18 30 tr VDD = 15 V,, RL = 0.2 W 12 20 td(off) ID ] 75 A, VGEN = 10 V, RG = 2.5 W 60 120 22 40 Rise Timec Turn-Off Delay Timec Fall Timec tf ns Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current Is 75 Pulsed Current ISM 200 Forward Voltagea VSD IF = 75 A, VGS = 0 V 1.2 1.5 V trr IF = 75 A, di/dt = 100 A/ms 55 100 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70794 S-000652—Rev. D, 27-Mar-00 SUP/SUB75N03-07 Vishay Siliconix Output Characteristics Transfer Characteristics 250 100 VGS = 10, 9, 8, 7, 6 V 80 5V I D – Drain Current (A) I D – Drain Current (A) 200 150 100 4V 50 60 40 TC = 125C 20 25C 3V –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.015 120 TC = –55C r DS(on) – On-Resistance ( ) g fs – Transconductance (S) 100 25C 80 125C 60 40 20 0 0.012 VGS = 4.5 V 0.009 VGS = 10 V 0.006 0.003 0 0 10 20 30 40 0 50 20 40 VGS – Gate-to-Source Voltage (V) 80 100 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 8000 Ciss 6000 C – Capacitance (pF) 60 4000 2000 Coss Crss 0 VGS = 10 V ID = 75 A 16 12 8 4 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 70794 S-000652—Rev. D, 27-Mar-00 30 0 20 40 60 80 100 120 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB75N03-07 Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150C I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 10 TJ = 25C 1 0.5 0 –50 0.1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 500 80 100 I D – Drain Current (A) I D – Drain Current (A) 60 40 20 10 ms Limited by rDS(on) 100 ms 1 ms 10 10 ms TC = 25C Single Pulse 0 100 ms dc 1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TA – Ambient Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70794 S-000652—Rev. D, 27-Mar-00