SUD40N03-18P New Product Vishay Siliconix N-Channel 30-V (D-S) 175C MOSFET VDS (V) 30 rDS(on) () ID (A)a 0.018 @ VGS = 10 V 40 0.027 @ VGS = 4.5 V 34 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD40N03-18P S N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C)b TC = 25C TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range Unit V 40 ID 28 IDM 100 IS 40 A 62.5c PD W 7.5b TJ, Tstg C –55 to 175 Parameter Junction-to-Ambientb Symbol t 10 sec Steady State RthJA Typical Maximum 17 20 50 60 Junction-to-Case RthJC 2 2.4 Junction-to-Lead RthJL 4 4.8 Unit C/W C/W Notes a. Package Limited. b. Surface Mounted on 1” x1” FR4 Board, t 10 sec. c. See SOA curve for voltage derating. Document Number: 71086 S-63636—Rev. A, 08-Nov-99 www.vishay.com FaxBack 408-970-5600 2-1 SUD40N03-18P New Product Vishay Siliconix Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 125C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V V 40 VGS = 10 V, ID = 20 A b Drain-Source On-State Resistance D i S O S R i rDS(on) Forward Transconductanceb gfs VGS = 10 V, ID = 20 A, TJ = 125C VDS = 15 V, ID = 20 A mA A 0.014 0.018 0.029 VGS = 4.5 V, ID = 10 A nA 0.021 W 0.027 10 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1300 VGS = 0 V, V VDS = 25 V V, F = 1 MH MHz pF F 340 95 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 8 12 tr 8.5 13 17 25 6 9 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 19 VDS = 15 V, V, ID = 40 A V VGS = 10 V 30 nC C 5 3 VDD = 15 V V,, RL = 0 0.37 37 W ID ^ 40 A, A VGEN = 10 V V, RG = 2 2.5 5W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Continuous Current IS 40 Pulsed Current ISM 80 Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V trr IF = 40 A, di/dt = 100 A/ms A Source-Drain Reverse Recovery Time 30 1.5 V 50 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 71086 S-63636—Rev. A, 08-Nov-99 SUD40N03-18P New Product Vishay Siliconix Output Characteristics Transfer Characteristics 160 160 VGS = 10 thru 8 V TC = –55C 6V 120 6V I D – Drain Current (A) I D – Drain Current (A) 120 80 5V 4V 40 25C 125C 80 40 2, 3 V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 60 0.06 25C 40 125C 0.05 r DS(on)– On-Resistance ( ) g fs – Transconductance (S) TC = –55C 50 30 20 10 0 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 0.01 0 0 20 40 60 80 100 120 0 20 40 ID – Drain Current (A) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 20 1800 V GS – Gate-to-Source Voltage (V) 1500 Ciss C – Capacitance (pF) 60 1200 900 600 Coss 300 Crss 0 VDS = 15 V ID = 40 A 16 12 8 4 0 0 5 10 15 20 25 VDS – Drain-to-Source Voltage (V) Document Number: 71086 S-63636—Rev. A, 08-Nov-99 30 0 10 20 30 40 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUD40N03-18P New Product Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 10 V ID = 40 A 1.2 0.8 TJ = 175C TJ = 25C 10 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Safe Operating Area 50 500 40 100 I D – Drain Current (A) I D – Drain Current (A) Maximum Avalanche Drain Current vs. Case Temperature 30 20 10, 100 ms Limited by rDS(on) 10 1 ms 10 ms 100 ms 1s dc 1 TC = 25C Single Pulse 10 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 71086 S-63636—Rev. A, 08-Nov-99