ETC SUD50N03-07AP

SUD50N03-07AP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175C MOSFET
VDS (V)
30
rDS(on) ()
ID (A)a, b
0.007 @ VGS = 10 V
25
0.010 @ VGS = 4.5 V
18
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50N03-07AP
S
N-Channel MOSFET
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 175C)a, b
TA = 25C
TA = 100C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
TC = 25C
Maximum Power Dissipation
TA = 25C
Operating Junction and Storage Temperature Range
Unit
V
25
ID
18
A
IDM
100
IS
25
88
PD
W
8.3a, b
TJ, Tstg
C
–55 to 175
Parameter
Junction-to-Ambienta
Symbol
t 10 sec
Steady State
Junction-to-Case
RthJA
RthJC
Typical
Maximum
15
18
40
50
1.4
1.7
Unit
C/W
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. t 10 sec.
Document Number: 71148
S-00719—Rev. B, 03-Apr-00
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2-1
SUD50N03-07AP
New Product
Vishay Siliconix
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 125C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
IDSS
ID(on)
VDS = 5 V, VGS = 10 V
V
2.0
50
Forward Transconductanceb
rDS(on)
gfs
0.007
VGS = 10 V, ID = 20 A, TJ = 125C
0.011
VGS = 4.5 V, ID = 20 A
0.010
VDS = 15 V, ID = 20 A
mA
A
VGS = 10 V, ID = 20 A
b
Drain-Source
On-State
Resistance
D i S
O S
R i
nA
20
W
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
3720
VGS = 0 V,
V VDS = 25 V
V, F = 1 MH
MHz
pF
F
715
370
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
10
Turn-On Delay Timec
td(on)
11
tr
6
15
50
100
11
20
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(off)
60
VDS = 15 V,
V, ID = 50 A
V VGS = 10 V
VDD = 15 V
V,, RL = 0
0.3
3W
ID ^ 50 A,
A VGEN = 10 V
V, RG = 2
2.5
5W
tf
120
nC
C
12
25
ns
Source-Drain Diode Ratings and Characteristic (TC = 25C)
Pulsed Current
ISM
100
A
Diode Forward Voltageb
VSD
IF = 100 A, VGS = 0 V
1.2
1.5
V
trr
IF = 50 A, di/dt = 100 A/ms
45
100
ns
Source-Drain Reverse Recovery Time
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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2-2
Document Number: 71148
S-00719—Rev. B, 03-Apr-00
SUD50N03-07AP
New Product
Vishay Siliconix
Output Characteristics
Transfer Characteristics
250
120
VGS = 10 thru 6 V
5V
100
I D – Drain Current (A)
I D – Drain Current (A)
200
150
4V
100
50
2V
80
60
TC = 125C
40
25C
20
3V
–55C
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1.0
Transconductance
2.0
2.5
3.0
3.5
4.0
4.5
On-Resistance vs. Drain Current
0.020
r DS(on)– On-Resistance ( )
TC = –55C
100
25C
80
125C
60
40
20
0
0.015
0.010
VGS = 4.5 V
VGS = 10 V
0.005
0
0
10
20
30
40
50
0
20
40
ID – Drain Current (A)
60
80
100
48
60
ID – Drain Current (A)
Capacitance
Gate Charge
5000
10
V GS – Gate-to-Source Voltage (V)
Ciss
4000
C – Capacitance (pF)
1.5
VGS – Gate-to-Source Voltage (V)
120
g fs – Transconductance (S)
0.5
3000
2000
Coss
1000
VDS = 15 V
ID = 50 A
8
6
4
2
Crss
0
0
0
6
12
18
24
VDS – Drain-to-Source Voltage (V)
Document Number: 71148
S-00719—Rev. B, 03-Apr-00
30
0
12
24
36
Qg – Total Gate Charge (nC)
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SUD50N03-07AP
New Product
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
TJ = 150C
1.6
I S – Source Current (A)
r DS(on)– On-Resistance ( W )
(Normalized)
VGS = 10 V
ID = 30 A
1.2
0.8
10
TJ = 25C
0.4
0
–50
1
–25
0
25
50
75
100
125
150
175
0
TJ – Junction Temperature (C)
0.3
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
30
1000
24
100
I D – Drain Current (A)
I D – Drain Current (A)
Limited by rDS(on)
18
12
6
10 ms
100 ms
10
1 ms
10 ms
100 ms
1
1s
0
10 s
TA = 25C
Single Pulse
0.1
100 s,
dc
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Case Temperature (C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
100
600
Square Wave Pulse Duration (sec)
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2-4
Document Number: 71148
S-00719—Rev. B, 03-Apr-00