SUD50N03-07AP New Product Vishay Siliconix N-Channel 30-V (D-S) 175C MOSFET VDS (V) 30 rDS(on) () ID (A)a, b 0.007 @ VGS = 10 V 25 0.010 @ VGS = 4.5 V 18 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-07AP S N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C)a, b TA = 25C TA = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range Unit V 25 ID 18 A IDM 100 IS 25 88 PD W 8.3a, b TJ, Tstg C –55 to 175 Parameter Junction-to-Ambienta Symbol t 10 sec Steady State Junction-to-Case RthJA RthJC Typical Maximum 15 18 40 50 1.4 1.7 Unit C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. t 10 sec. Document Number: 71148 S-00719—Rev. B, 03-Apr-00 www.vishay.com FaxBack 408-970-5600 2-1 SUD50N03-07AP New Product Vishay Siliconix Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V V 2.0 50 Forward Transconductanceb rDS(on) gfs 0.007 VGS = 10 V, ID = 20 A, TJ = 125C 0.011 VGS = 4.5 V, ID = 20 A 0.010 VDS = 15 V, ID = 20 A mA A VGS = 10 V, ID = 20 A b Drain-Source On-State Resistance D i S O S R i nA 20 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 3720 VGS = 0 V, V VDS = 25 V V, F = 1 MH MHz pF F 715 370 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 10 Turn-On Delay Timec td(on) 11 tr 6 15 50 100 11 20 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 60 VDS = 15 V, V, ID = 50 A V VGS = 10 V VDD = 15 V V,, RL = 0 0.3 3W ID ^ 50 A, A VGEN = 10 V V, RG = 2 2.5 5W tf 120 nC C 12 25 ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Pulsed Current ISM 100 A Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 45 100 ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 71148 S-00719—Rev. B, 03-Apr-00 SUD50N03-07AP New Product Vishay Siliconix Output Characteristics Transfer Characteristics 250 120 VGS = 10 thru 6 V 5V 100 I D – Drain Current (A) I D – Drain Current (A) 200 150 4V 100 50 2V 80 60 TC = 125C 40 25C 20 3V –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1.0 Transconductance 2.0 2.5 3.0 3.5 4.0 4.5 On-Resistance vs. Drain Current 0.020 r DS(on)– On-Resistance ( ) TC = –55C 100 25C 80 125C 60 40 20 0 0.015 0.010 VGS = 4.5 V VGS = 10 V 0.005 0 0 10 20 30 40 50 0 20 40 ID – Drain Current (A) 60 80 100 48 60 ID – Drain Current (A) Capacitance Gate Charge 5000 10 V GS – Gate-to-Source Voltage (V) Ciss 4000 C – Capacitance (pF) 1.5 VGS – Gate-to-Source Voltage (V) 120 g fs – Transconductance (S) 0.5 3000 2000 Coss 1000 VDS = 15 V ID = 50 A 8 6 4 2 Crss 0 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 71148 S-00719—Rev. B, 03-Apr-00 30 0 12 24 36 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUD50N03-07AP New Product Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 TJ = 150C 1.6 I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 10 V ID = 30 A 1.2 0.8 10 TJ = 25C 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 30 1000 24 100 I D – Drain Current (A) I D – Drain Current (A) Limited by rDS(on) 18 12 6 10 ms 100 ms 10 1 ms 10 ms 100 ms 1 1s 0 10 s TA = 25C Single Pulse 0.1 100 s, dc 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 71148 S-00719—Rev. B, 03-Apr-00