SUP/SUB75N05-07 New Product Vishay Siliconix N-Channel 55-V (D-S), 175C MOSFET V(BR)DSS (V) rDS(on) () ID (A) 0.007 @ VGS = 10 V 55 75 a 0.009 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-07 Top View SUP75N05-07 N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 55 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) 175 C) TC = 125C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipation L = 0.1 mH TC = 25C (TO-220AB and TO-263) TA = 25C (TO-263)d Operating Junction and Storage Temperature Range ID 60 240 IAR 60 PD V 75a IDM EAR Unit 180 158c 3.7 A mJ W TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case 40 RthJA RthJC 62.5 C/W 0.95 Notes a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70871 S-60952—Rev. A, 19-Apr-99 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB75N05-07 New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 55 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 44 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Z G V l D i Current C On-State Drain Currenta a D i S O S R i Drain-Source On-State Resistance IDSS ID(on) rDS(on) V 3 VDS = 44 V, VGS = 0 V, TJ = 125C 50 VDS = 44 V, VGS = 0 V, TJ = 175C 250 VDS w 5 V, VGS = 10 V 120 0.0056 0.007 VGS = 4.5 V, ID = 20 A 0.0072 0.009 VDS = 15 V, ID = 30 A W 0.011 VGS = 10 V, ID = 30 A, TJ = 175C gfs mA A A VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125C Forward Transconductancea nA 0.015 40 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs 6830 VGS = 0 V, VDS = 25 V, f = 1 MHz pF F 720 350 135 VDS = 30 V, V VGS = 10 V V, ID = 75 A 170 nC C 25 Gate-Drain Chargec Qgd 34 Turn-On Delay Timec td(on) 13 20 tr 11 20 90 160 25 40 Rise Timec Turn-Off Delay Timec Fall Timec td(off) VDD = 30 V V,, RL = 0 0.47 47 W ID ^ 75 A, A VGEN = 10 V V, RG = 2 2.5 5W tf ns Source-drain Diode Ratings and Characteristics (Tc = 25C)b Continuous Current IS 75 Pulsed Current ISM 240 Forward Voltagea VSD A Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 75 A, VGS = 0 V trr IRM(REC) Qrr IF = 75 A A, di/dt = 100 A/ms 1.0 1.3 V 45 80 ns 2 5 A 0.09 0.4 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70871 S-60952—Rev. A, 19-Apr-99 SUP/SUB75N05-07 New Product Vishay Siliconix Output Characteristics Transfer Characteristics 250 200 VGS = 5 thru 10 V 160 I D – Drain Current (A) I D – Drain Current (A) 200 150 100 4V 50 120 80 TC = 125C 40 25C 2, 3 V –55C 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) Transconductance 3 4 5 On-Resistance vs. Drain Current 210 0.010 TC = –55C 180 25C r DS(on) – On-Resistance ( ) g fs – Transconductance (S) 2 VGS – Gate-to-Source Voltage (V) 150 125C 120 90 60 VGS = 4.5 V 0.008 VGS = 10 V 0.006 0.004 0.002 30 0 0 0 20 40 60 80 100 0 20 40 VGS – Gate-to-Source Voltage (V) 80 100 ID – Drain Current (A) Capacitance Gate Charge 10 V GS – Gate-to-Source Voltage (V) 10000 Ciss 8000 C – Capacitance (pF) 60 6000 4000 Crss 2000 Coss 0 VGS = 30 V ID = 75 A 8 6 4 2 0 0 10 20 30 40 VDS – Drain-to-Source Voltage (V) Document Number: 70871 S-60952—Rev. A, 19-Apr-99 50 0 20 40 60 80 100 120 140 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB75N05-07 New Product Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 TJ = 150C 2.0 I S – Source Current (A) r DS(on) – On-Resistance () (Normalized) VGS = 10 V ID = 75 A 1.5 1.0 TJ = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) Drain-Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 300 80 100 V(BR)DSS (V) 70 I Dav (a) IAV (A) @ TJ = 25C 60 10 IAV (A) @ TJ = 150C 50 1 0.0001 0.001 0.01 tin (Sec) www.vishay.com FaxBack 408-970-5600 2-4 0.1 1 40 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) Document Number: 70871 S-60952—Rev. A, 19-Apr-99 SUP/SUB75N05-07 New Product Vishay Siliconix Maximum Drain Current vs. Case Temperature Safe Operating Area 300 80 10 ms Limited by rDS(on) I D – Drain Current (A) I D – Drain Current (A) 100 ms 100 60 40 1 ms 10 20 10 ms 100 ms dc TC = 25C Single Pulse 1 0 0 25 50 75 100 125 150 0.1 175 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) Document Number: 70871 S-60952—Rev. A, 19-Apr-99 www.vishay.com FaxBack 408-970-5600 2-5