TI OPA2180

OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
www.ti.com
0.1-μV/°C Drift, Low-Noise, Rail-to-Rail Output, 36-V, Zero-Drift
OPERATIONAL AMPLIFIERS
Check for Samples: OPA2180, OPA4180
FEATURES
APPLICATIONS
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1
2
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Bridge Amplifiers
Strain Gauges
Test Equipment
Transducer Applications
Temperature Measurement
Electronic Scales
Medical Instrumentation
Resister Thermal Detectors
Precision Active Filters
DESCRIPTION
The OPA2180 and OPA4180 operational amplifiers
use zero-drift techniques to simultaneously provide
low offset voltage (75 μV), and near zero-drift over
time
and
temperature.
These
miniature,
high-precision, low quiescent current amplifiers offer
high input impedance and rail-to-rail output swing
within 18 mV of the rails. The input common-mode
range includes the negative rail. Either single or dual
supplies can be used in the range of +4.0 V to +36 V
(±2 V to ±18 V).
50 nV/div
•
•
•
Low Offset Voltage: 75 μV (max)
Zero-Drift: 0.1 μV/°C
Low Noise: 10 nV/√Hz
Very Low 1/f Noise
Excellent DC Precision:
– PSRR: 126 dB
– CMRR: 114 dB
– Open-Loop Gain (AOL): 120 dB
Quiescent Current: 525 μA (max)
Wide Supply Range: ±2 V to ±18 V
Rail-to-Rail Output:
Input Includes Negative Rail
Low Bias Current: 250 pA (typ)
RFI Filtered Inputs
MicroSIZE Packages
The dual version is offered in MSOP-8 and SO-8
packages. The quad is offered in SO-14 and
TSSOP-14 packages. All versions are specified for
operation from –40°C to +105°C.
Peak-to-Peak Noise = 250 nV
Time (1 s/div)
Zero-Drift Amplifier Portfolio
VERSION
PRODUCT
OFFSET VOLTAGE
(µV)
OFFSET VOLTAGE DRIFT
(µV/°C)
Single (1)
OPA188 (4 V to 36 V)
25
0.085
2
OPA333 (5 V)
10
0.05
0.35
Single
Dual
Quad (1)
Quad
(1)
BANDWIDTH
(MHz)
OPA378 (5 V)
50
0.25
0.9
OPA735 (12 V)
5
0.05
1.6
OPA2188 (4 V to 36 V)
25
0.085
2
OPA2180 (4 V to 36 V)
75
0.35
2
OPA2333 (5 V)
10
0.05
0.35
OPA2378 (5 V)
50
0.25
0.9
OPA2735 (12 V)
5
0.05
1.6
OPA4188 (4 V to 36 V)
25
0.085
2
OPA4180 (4 V to 36 V)
75
0.35
2
OPA4330 (5 V)
50
0.25
0.35
Shaded rows denote future product releases.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
UNLESS OTHERWISE NOTED this document contains
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated
OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE INFORMATION (1)
PACKAGELEAD
PACKAGE
DESIGNATOR
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
OPA2180
SO-8
D
–40°C to +105°C
2180
OPA2180 (2)
MSOP-8
DGK
–40°C to +105°C
TBD
SO-14
D
–40°C to +105°C
OPA4180
PRODUCT
ORDERING
NUMBER
TRANSPORT MEDIA,
QUANTITY
DUAL
OPA2180ID
Rails, 100
OPA2180IDR
Tape and Reel, 2500
OPA2180IDGKT
Tape and Reel, 250
OPA2180IDGKR
Tape and Reel, 2500
OPA4180ID
Rails, 90
OPA4180IDR
Tape and Reel, 2000
QUAD
OPA4180 (2)
TSSOP-14
(1)
(2)
PW
–40°C to +105°C
OPA4180
OPA4180IPW
Rails, 90
OPA4180IPWR
Tape and Reel, 2000
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
Shaded rows denote future product releases.
ABSOLUTE MAXIMUM RATINGS (1)
Supply voltage
Signal input terminals
OPA2180, OPA4180
UNIT
±20, 40 (single supply)
V
Voltage
(V–) – 0.5 to (V+) + 0.5
V
Current
±10
mA
Output short-circuit (2)
Continuous
Operating temperature
–55 to +125
°C
Storage temperature
–65 to +150
°C
Junction temperature
+150
°C
1.5
kV
1
kV
ESD ratings
(1)
(2)
2
Human body model (HBM)
Charged device model (CDM)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only and functional operation of the device at these or any other conditions beyond
those specified is not implied.
Short-circuit to ground, one amplifier per package.
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OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
www.ti.com
ELECTRICAL CHARACTERISTICS: VS = ±2 V to ±18 V (VS = +4 V to +36 V)
At TA = +25°C, RL = 10 kΩ connected to VS/2, and VCOM = VOUT = VS/2, unless otherwise noted.
OPA2180, OPA4180
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage
dVOS/dT
Input offset voltage drift
PSRR
Power-supply rejection ratio
μV
15
75
TA = –40°C to +105°C
0.1
0.35
μV/°C
VS = 4 V to 36 V, VCM = VS/2
0.1
0.5
μV/V
0.5
μV/V
TA = –40°C to +105°C,
VS = 4 V to 36 V, VCM = VS/2
See
note (1)
Long-term stability
Channel separation, dc
μV
μV/V
1
INPUT BIAS CURRENT
IB
IOS
±0.25
VCM = VS/2
Input bias current
TA = –40°C to +105°C
±0.5
Input offset current
TA = –40°C to +105°C
±1
nA
±5
nA
±2
nA
±2.5
nA
NOISE
Input voltage noise
f = 0.1 Hz to 10 Hz
0.25
μVPP
en
Input voltage noise density
f = 1 kHz
10
nV/Hz
in
Input current noise density
f = 1 kHz
10
fA/Hz
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
(V+) – 1.5
V–
V
(V–) < VCM < (V+) – 1.5 V
104
114
dB
TA = –40°C to +105°C,
(V–) + 0.5 V < VCM < (V+) – 1.5 V
100
104
dB
INPUT IMPEDANCE
Differential
100/6
MΩ/pF
Common-mode
6/9.5
1012 Ω/pF
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
(V–) + 500 mV < VO < (V+) – 500 mV, RL = 10 kΩ
110
120
dB
TA = –40°C to +105°C,
(V–) + 500 mV < VO < (V+) – 500 mV, RL = 10 kΩ
104
114
dB
FREQUENCY RESPONSE
GBW
Gain-bandwidth product
SR
Slew rate
Settling time
THD+N
(1)
2
MHz
G = +1
0.8
V/μs
0.1%
VS = ±18 V, G = 1, 10-V step
22
μs
0.01%
VS = ±18 V, G = 1, 10-V step
30
μs
1
μs
0.0001
%
Overload recovery time
VIN × G = VS
Total harmonic distortion + noise
f = 1 kHz, G = 1, VOUT = 1 VRMS
1000-hour life test at +125°C demonstrated randomly distributed variation in the range of measurement limits, or approximately 4 μV.
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OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
www.ti.com
ELECTRICAL CHARACTERISTICS: VS = ±2 V to ±18 V (VS = +4 V to +36 V) (continued)
At TA = +25°C, RL = 10 kΩ connected to VS/2, and VCOM = VOUT = VS/2, unless otherwise noted.
OPA2180, OPA4180
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT
No load
Voltage output swing from rail
8
18
mV
RL = 10 kΩ
250
300
mV
TA = –40°C to +105°C, RL = 10 kΩ
325
360
mV
±18
ISC
Short-circuit current
RO
Open-loop output resistance
CLOAD
Capacitive load drive
f = 2 MHz, IO = 0 mA
mA
120
Ω
1
nF
POWER SUPPLY
±2 (or 4)
VS
Operating voltage range
IQ
Quiescent current (per amplifier)
±18 (or 36)
V
525
μA
600
μA
450
TA = –40°C to +105°C, IO = 0 mA
TEMPERATURE
Specified range
–40
+105
°C
Operating range
–40
+125
°C
Storage range
–65
+150
°C
THERMAL INFORMATION: OPA2180
OPA2180
THERMAL METRIC
(1)
D (SO)
DGK (MSOP)
8 PINS
8 PINS
θJA
Junction-to-ambient thermal resistance
111.0
159.3
θJCtop
Junction-to-case (top) thermal resistance
54.9
37.4
θJB
Junction-to-board thermal resistance
51.7
48.5
ψJT
Junction-to-top characterization parameter
9.3
1.2
ψJB
Junction-to-board characterization parameter
51.1
77.1
θJCbot
Junction-to-case (bottom) thermal resistance
n/a
n/a
(1)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
THERMAL INFORMATION: OPA4180
OPA4180
THERMAL METRIC (1)
D (SO)
PW (TSSOP)
14 PINS
14 PINS
θJA
Junction-to-ambient thermal resistance
TBD
TBD
θJCtop
Junction-to-case (top) thermal resistance
TBD
TBD
θJB
Junction-to-board thermal resistance
TBD
TBD
ψJT
Junction-to-top characterization parameter
TBD
TBD
ψJB
Junction-to-board characterization parameter
TBD
TBD
θJCbot
Junction-to-case (bottom) thermal resistance
TBD
TBD
(1)
4
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
www.ti.com
PIN CONFIGURATIONS
OPA2180
D, DGK PACKAGES (SO-8, MSOP-8)
(TOP VIEW)
OUT A
1
-IN A
2
+IN A
3
V-
4
A
B
8
V+
7
OUT B
6
-IN B
5
+IN B
OPA4180
D, PW PACKAGES (SO-14, TSSOP-14)
(TOP VIEW)
14 OUT D
OUT A
1
-IN A
2
+IN A
3
12 +IN D
V+
4
11 V-
+IN B
5
-IN B
6
OUT B
7
A
D
13 -IN D
10 +IN C
B
C
9
-IN C
8
OUT C
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OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
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TYPICAL CHARACTERISTICS
Table 1. Characteristic Performance Measurements
DESCRIPTION
FIGURE
IB and IOS vs Common-Mode Voltage
Figure 1
Input Bias Current vs Temperature
Figure 2
Output Voltage Swing vs Output Current (Maximum Supply)
Figure 3
CMRR vs Temperature
Figure 4
0.1-Hz to 10-Hz Noise
Figure 5
Input Voltage Noise Spectral Density vs Frequency
Figure 6
Open-Loop Gain and Phase vs Frequency
Figure 7
Open-Loop Gain vs Temperature
Figure 8
Open-Loop Output Impedance vs Frequency
Figure 9
Small-Signal Overshoot vs Capacitive Load (100-mV Output Step)
Figure 10, Figure 11
No Phase Reversal
Figure 12
Positive Overload Recovery
Figure 13
Negative Overload Recovery
Figure 14
Small-Signal Step Response (100 mV)
Figure 15, Figure 16
Large-Signal Step Response
Figure 17, Figure 18
Large-Signal Settling Time (10-V Positive Step)
Figure 19
Large-Signal Settling Time (10-V Negative Step)
Figure 20
Short-Circuit Current vs Temperature
Figure 21
Maximum Output Voltage vs Frequency
Figure 22
Channel Separation vs Frequency
Figure 23
EMIRR IN+ vs Frequency
Figure 24
6
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OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS
VS = ±18 V, VCM = VS/2, RLOAD = 10 kΩ connected to VS/2, and CL = 100 pF, unless otherwise noted.
IB AND IOS vs COMMON-MODE VOLTAGE
INPUT BIAS CURRENT vs TEMPERATURE
4000
500
IB+
-IB
300
IOS
IB-
3000
Input Bias Current (pA)
IB and IOS (pA)
+IB
400
200
100
0
-100
IOS
2000
1000
0
-1000
-200
-300
-2000
-20
-15
-10
0
-5
10
5
15
20
-55
-35
5
-15
VCM (V)
Figure 1.
45
65
85
105
125
Figure 2.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
(Maximum Supply)
20
19
18
17
16
15
14
-14
-15
-16
-17
-18
-19
-20
CMRR vs TEMPERATURE
Common-Mode Rejection Ratio (mV/V)
Output Voltage (V)
25
Temperature (°C)
-40°C
+85°C
+125°C
40
(V-) < VCM < (V+) - 1.5 V
35
(V-) + 0.5 V < VCM < (V+) - 1.5 V
30
VSUPPLY = ±2 V
25
20
15
10
5
0
0
2
4
6
8
10
12
14
18
16
20
22
24
-55
-35
-15
Output Current (mA)
5
25
45
65
85
105
125
Temperature (°C)
Figure 3.
Figure 4.
0.1-Hz TO 10-Hz NOISE
INPUT VOLTAGE NOISE SPECTRAL DENSITY vs
FREQUENCY
50 nV/div
Voltage Noise Density (nV/ÖHz)
100
10
Peak-to-Peak Noise = 250 nV
Time (1 s/div)
1
0.1
1
10
100
1k
10k
100k
Frequency (Hz)
Figure 5.
Figure 6.
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OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
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TYPICAL CHARACTERISTICS (continued)
VS = ±18 V, VCM = VS/2, RLOAD = 10 kΩ connected to VS/2, and CL = 100 pF, unless otherwise noted.
OPEN-LOOP GAIN AND PHASE vs FREQUENCY
Gain
Phase
120
VSUPPLY = 36 V, RL = 10 kW
2.5
Phase (°)
90
60
40
AOL (mV/V)
2
80
1.5
1
45
20
0
−20
VSUPPLY = 4 V, RL = 10 kW
135
100
Gain (dB)
OPEN-LOOP GAIN vs TEMPERATURE
3
180
140
0.5
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
0
100M
0
-55
G007
-35
5
-15
25
45
65
85
105
125
Temperature (°C)
Figure 7.
Figure 8.
OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
(100-mV Output Step)
10k
40
RL = 10 kW
35
ROUT = 0 W
30
Overshoot (%)
ZO (W)
1k
100
10
ROUT = 25 W
25
ROUT = 50 W
20
15
G = +1
+18 V
ROUT
10
Device
1
-18 V
5
RL
CL
0
1m
1
10
100
1k
10k
100k
1M
10M
0
100 200 300 400 500 600 700 800 900 1000
Frequency (Hz)
Capacitive Load (pF)
Figure 9.
Figure 10.
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
(100-mV Output Step)
NO PHASE REVERSAL
40
ROUT = 0 W
35
Device
ROUT = 50 W
30
25
-18 V
37 VPP
Sine Wave
(±18.5 V)
5 V/div
Overshoot (%)
+18 V
ROUT = 25 W
20
15
RI = 10 kW
10
RF = 10 kW
G = -1
+18 V
ROUT
Device
5
CL
RL = 10 kW
VIN
VOUT
-18 V
0
0
100 200 300 400 500 600 700 800 900 1000
Time (100 ms/div)
Capacitive Load (pF)
Figure 11.
8
Figure 12.
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OPA4180
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TYPICAL CHARACTERISTICS (continued)
VS = ±18 V, VCM = VS/2, RLOAD = 10 kΩ connected to VS/2, and CL = 100 pF, unless otherwise noted.
POSITIVE OVERLOAD RECOVERY
NEGATIVE OVERLOAD RECOVERY
VIN
VOUT
20 kW
20 kW
5 V/div
Device
5 V/div
+18 V
2 kW
VOUT
VIN
-18 V
+18 V
2 kW
VOUT
Device
VIN
-18 V
G = -10
G = -10
VOUT
VIN
Time (5 ms/div)
Time (5 ms/div)
Figure 13.
Figure 14.
SMALL-SIGNAL STEP RESPONSE
(100 mV)
SMALL-SIGNAL STEP RESPONSE
(100 mV)
+18 V
RL = 10 kW
CL = 10 pF
20 mV/div
20 mV/div
RL = 10 kW
CL = 10 pF
G = +1
RI
= 2 kW
RF
= 2 kW
+18 V
Device
Device
-18 V
RL
CL
CL
-18 V
G = -1
Time (20 ms/div)
Time (1 ms/div)
Figure 15.
Figure 16.
LARGE-SIGNAL STEP RESPONSE
LARGE-SIGNAL STEP RESPONSE
G = +1
RL = 10 kW
CL = 10 pF
5 V/div
5 V/div
G = -1
RL = 10 kW
CL = 10 pF
Time (50 ms/div)
Time (50 ms/div)
Figure 17.
Figure 18.
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TYPICAL CHARACTERISTICS (continued)
VS = ±18 V, VCM = VS/2, RLOAD = 10 kΩ connected to VS/2, and CL = 100 pF, unless otherwise noted.
LARGE-SIGNAL SETTLING TIME
(10-V Positive Step)
LARGE-SIGNAL SETTLING TIME
(10-V Negative Step)
10
6
4
12-Bit Settling
2
0
-2
(±1/2 LSB = ±0.024%)
-4
-6
-8
6
4
12-Bit Settling
2
0
-2
(±1/2 LSB = ±0.024%)
-4
-6
-8
-10
-10
0
10
20
30
40
50
60
0
10
Figure 19.
Figure 20.
40
50
60
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
30
15
20
12.5
Output Voltage (VPP)
VS = ±15 V
ISC, Source
0
ISC, Sink
-10
-20
10
Maximum output voltage without
slew-rate induced distortion.
7.5
VS = ±5 V
5
2.5
-30
VS = ±2.25 V
0
-55
-35
-15
5
25
45
65
85
105
125
1k
10k
100k
1M
10M
Frequency (Hz)
Temperature (°C)
Figure 21.
Figure 22.
CHANNEL SEPARATION vs FREQUENCY
EMIRR IN+ vs FREQUENCY
160
-60
Channel A to B
Channel B to A
-70
140
-80
120
EMIRR IN+ (dB)
Channel Separation (dB)
30
Time (ms)
10
-90
-100
-110
-120
100
80
60
40
-130
20
-140
-150
1
10
20
Time (ms)
SHORT-CIRCUIT CURRENT vs TEMPERATURE
ISC (mA)
G = -1
8
D From Final Value (mV)
D From Final Value (mV)
10
G = -1
8
10
100
1k
10k
100k
1M
10M
100M
0
10M
100M
Frequency (Hz)
Frequency (Hz)
Figure 23.
Figure 24.
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1G
10G
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OPA2180
OPA4180
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APPLICATION INFORMATION
The OPAx180 family of operational amplifiers combine precision offset and drift with excellent overall
performance, making them ideal for many precision applications. The precision offset drift of only 0.085 µV/°C
provides stability over the entire temperature range. In addition, the device offers excellent overall performance
with high CMRR, PSRR, and AOL. As with all amplifiers, applications with noisy or high-impedance power
supplies require decoupling capacitors close to the device pins. In most cases, 0.1-µF capacitors are adequate.
OPERATING CHARACTERISTICS
The OPAx180 family of amplifiers is specified for operation from 4 V to 36 V (±2 V to ±18 V). Many of the
specifications apply from –40°C to +105°C. Parameters that can exhibit significant variance with regard to
operating voltage or temperature are presented in the Typical Characteristics.
EMI REJECTION
The OPAx180 uses integrated electromagnetic interference (EMI) filtering to reduce the effects of EMI
interference from sources such as wireless communications and densely populated boards with a mix of analog
signal chain and digital components. EMI immunity can be improved with circuit design techniques; the OPAx180
benefits from these design improvements. Texas Instruments has developed the ability to accurately measure
and quantify the immunity of an operational amplifier over a broad frequency spectrum extending from 10 MHz to
6 GHz. Figure 25 shows the results of this testing on the OPAx180. Detailed information can also be found in the
Application Report EMI Rejection Ratio of Operational Amplifiers (SBOA128), available for download from the TI
website.
160
140
EMIRR IN+ (dB)
120
100
80
60
40
20
0
10M
100M
1G
10G
Frequency (Hz)
Figure 25. OPAx180 EMIRR Testing
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OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
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GENERAL LAYOUT GUIDELINES
For best operational performance of the device, good printed circuit board (PCB) layout practices are
recommended. Low-loss, 0.1-µF bypass capacitors should be connected between each supply pin and ground,
placed as close to the device as possible. A single bypass capacitor from V+ to ground is applicable to
single-supply applications.
PHASE-REVERSAL PROTECTION
The OPAx180 family has an internal phase-reversal protection. Many op amps exhibit a phase reversal when the
input is driven beyond its linear common-mode range. This condition is most often encountered in noninverting
circuits when the input is driven beyond the specified common-mode voltage range, causing the output to
reverse into the opposite rail. The input of the OPAx180 prevents phase reversal with excessive common-mode
voltage. Instead, the output limits into the appropriate rail. This performance is shown in Figure 26.
+18 V
Device
5 V/div
-18 V
37 VPP
Sine Wave
(±18.5 V)
VIN
VOUT
Time (100 ms/div)
Figure 26. No Phase Reversal
CAPACITIVE LOAD AND STABILITY
The dynamic characteristics of the OPAx180 have been optimized for a range of common operating conditions.
The combination of low closed-loop gain and high capacitive loads decreases the phase margin of the amplifier
and can lead to gain peaking or oscillations. As a result, heavier capacitive loads must be isolated from the
output. The simplest way to achieve this isolation is to add a small resistor (for example, ROUT equal to 50 Ω) in
series with the output. Figure 27 and Figure 28 illustrate graphs of small-signal overshoot versus capacitive load
for several values of ROUT. Also, refer to the Applications Report, Feedback Plots Define Op Amp AC
Performance (SBOA015), available for download from the TI website, for details of analysis techniques and
application circuits.
40
40
RL = 10 kW
ROUT = 0 W
35
35
ROUT = 0 W
ROUT = 25 W
25
ROUT = 50 W
20
15
G = +1
+18 V
ROUT
10
ROUT = 50 W
-18 V
25
20
15
RI = 10 kW
10
Device
5
ROUT = 25 W
30
Overshoot (%)
Overshoot (%)
30
RL
G = -1
+18 V
ROUT
CL
Device
5
CL
RL = 10 kW
-18 V
0
0
0
100 200 300 400 500 600 700 800 900 1000
0
100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
Capacitive Load (pF)
Figure 27. Small-Signal Overshoot versus
Capacitive Load (100-mV Output Step)
12
RF = 10 kW
Figure 28. Small-Signal Overshoot versus
Capacitive Load (100-mV Output Step)
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Product Folder Link(s): OPA2180 OPA4180
OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
www.ti.com
ELECTRICAL OVERSTRESS
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress.
These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the output
pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown
characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.
Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from
accidental ESD events both before and during product assembly.
These ESD protection diodes also provide in-circuit, input overdrive protection, as long as the current is limited to
10 mA as stated in the Absolute Maximum Ratings. Figure 29 shows how a series input resistor may be added to
the driven input to limit the input current. The added resistor contributes thermal noise at the amplifier input and
its value should be kept to a minimum in noise-sensitive applications.
V+
IOVERLOAD
10 mA max
Device
VOUT
VIN
5 kW
Figure 29. Input Current Protection
An ESD event produces a short duration, high-voltage pulse that is transformed into a short duration,
high-current pulse as it discharges through a semiconductor device. The ESD protection circuits are designed to
provide a current path around the operational amplifier core to prevent it from being damaged. The energy
absorbed by the protection circuitry is then dissipated as heat.
When the operational amplifier connects into a circuit, the ESD protection components are intended to remain
inactive and not become involved in the application circuit operation. However, circumstances may arise where
an applied voltage exceeds the operating voltage range of a given pin. Should this condition occur, there is a risk
that some of the internal ESD protection circuits may be biased on, and conduct current. Any such current flow
occurs through ESD cells and rarely involves the absorption device.
If there is an uncertainty about the ability of the supply to absorb this current, external zener diodes may be
added to the supply pins. The zener voltage must be selected such that the diode does not turn on during normal
operation.
However, its zener voltage should be low enough so that the zener diode conducts if the supply pin begins to
rise above the safe operating supply voltage level.
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Product Folder Link(s): OPA2180 OPA4180
13
OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
www.ti.com
APPLICATION EXAMPLES
The application examples of Figure 30 and Figure 31 highlight only a few of the circuits where the OPAx180
family of devices can be used.
15 V
U2
½
OPA2180
VOUTP
3.3 V
VDIFF/2
-15 V
R5
1 kW
Ref 1
Ref 2
RG
500 W
+
VCM
10
R7
1 kW
U1
INA159
VOUT
Sense
-15 V
-VDIFF/2
U5
½
OPA2180
VOUTN
15 V
Figure 30. Discrete INA + Attenuation for ADC with 3.3-V Supply
+15 V
(5 V)
Out
In
REF5050
1 mF
1 mF
R2
49.1 kW
R3
60.4 kW
R1
4.99 kW
OPA2180
VOUT
0°C = 0 V
200°C = 5 V
R5
(1)
105.8 kW
RTD
Pt100
R4
1 kW
(1) R5 provides positive-varying excitation to linearize output.
Figure 31. RTD Amplifier with Linearization
14
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Product Folder Link(s): OPA2180 OPA4180
OPA2180
OPA4180
SBOS584B – NOVEMBER 2011 – REVISED DECEMBER 2011
www.ti.com
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (November 2011) to Revision B
Page
•
Changed footnote 1 of Electrical Characteristics table ......................................................................................................... 3
•
Updated Figure 7 .................................................................................................................................................................. 8
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Product Folder Link(s): OPA2180 OPA4180
15
PACKAGE OPTION ADDENDUM
www.ti.com
28-Aug-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
75
Green (RoHS
& no Sb/Br)
OPA2180ID
ACTIVE
SOIC
D
8
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
Samples
(Requires Login)
CU NIPDAU Level-2-260C-1 YEAR
OPA2180IDGK
PREVIEW
VSSOP
DGK
8
80
TBD
Call TI
Call TI
OPA2180IDGKR
PREVIEW
VSSOP
DGK
8
2500
TBD
Call TI
Call TI
OPA2180IDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA4180ID
PREVIEW
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA4180IDR
PREVIEW
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA4180IPW
PREVIEW
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
Call TI
Level-2-260C-1 YEAR
OPA4180IPWR
PREVIEW
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
Call TI
Level-2-260C-1 YEAR
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
28-Aug-2012
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
OPA2180IDR
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA2180IDR
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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