GULFSEMI G4SB80

G4SB60 THRU
G4SB80
SINGLE PHASE GLASS
PASSIVATED BRIDGE RECTIFIER
Voltage: 600
to
800V
4.0A
Current:
Features
GSIB-3S
Glass passivated chip junction
Ideal for printed circuit board
High surge current capability
High case dielectric strength
Mechanical Data
Terminal: Plated leads solderable per MIL-STD 202E,
Method 208C
Case: UL-94 Class V-0 recognized Flame Retardant Epoxy
Polarity: Polarity symbol marked on body
Mounting position: any
Dimensions in millimeters
MAXIMUM
RATINGS AND ELECTRICAL
CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
Symbol
G4SB60
G4SB80
units
Maximum repetitive peak reverse voltage
Vrrm
600
800
V
Maximum RMS voltage
Vrms
420
560
V
Maximum DC blocking voltage
Vdc
600
800
V
Maximum average forward Rectified output current
at Tc = 108℃ with heatsink
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage drop per
leg at 2.0A
If(av)
4.0
A
Ifsm
160
A
Vf
0.95
V
I2t
Rating for fusing (t < 10ms)
80
110
A2Sec
Ir
10.0
250
µA
(Note1)
(Note2)
Rth(ja)
Rth(jc)
30.0
5.5
℃/W
Operating junction and storage temperature range
Tj, Tstg
-55 to +150
℃
Maximum DC reverse current at
rated DC blocking voltage per leg
Ta = 25°C
Ta = 125°C
Maximum thermal resistance per leg
Note:
1. junction to ambient, without heatsink
2. junction to case, with heatsink
Rev.A1
www.gulfsemi.com
RATINGS AND CHARACTERISTIC CURVES G4SB60 THRU G4SB80
Rev.A1
www.gulfsemi.com