NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCESM IC ICM IB ICsat IBM Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Collector Current saturation Base Peak Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 VBE = 0 @ TC = 25° Value Unit 700 1500 8 15 4 4.5 6 34 150 -65 to +150 V V A A A A A Watts °C °C Value Unit 1.0 3.7 2.8 35 K/W K/W K/W K/W Value Unit 1500 V 21 pF THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-h RthJ-h RthJ-a Ratings Thermal Resistance, Junction to Mounting Base Thermal Resistance, Junction to Hexternal Heatsink Thermal Resistance, Junction to Hexternal Heatsink Thermal Resistance, Junction to Ambient ISOLATION Symbol VISOL CISOL * Ratings Isolation Voltage from all terminals to external heatsink (peak value) Isolation capacitance from collector to external heatsink COMSET SEMICONDUCTORS Typ. 1/2 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICES VCE0(SUS) IEBO VCE(SAT) VBE(SAT) VF HFE fT Cc ts tf Ratings Test Condition(s) Collector Cutoff Current Collector-Emitter Sustaining Voltage Emitter Cutoff Current Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Forward Voltage DC Current Gain Transition frequency Collector capacitance Storage Time Fall Time Min Typ Mx Unit - - 1 2 mA 700 - - V VEB=6.0 V, IC=0 - - 10 mA IC=4.5A , IB=2 A - - 1.0 IC=4.5 A , IB=2 A - - 1.3 IF=4.5 A IC=100 mA , VCE=5.0 V VCE=5 V , IC=0.1 A, f=5MHz IE= ie= 0, VCB=10 V, f=1 MHz 5 - 1.6 13 7 125 6.5 0.7 2 30 - VCE= VCESM= 1500 V , VBE= 0 VCE= VCESM= 1500 V , VBE= 0 ,Tj =125°C IC=0.1A , IB=0, L=25mH V -VIM= 4V, LB= 6µH IC=ICsat, IB= 1.4A(-dIB/dt= 0.6A/µs) MECHANICAL DATA CASE SOT199 Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. * COMSET SEMICONDUCTORS 2/2 V MHz pF µs