SAVANTIC 2SA1110

SavantIC Semiconductor
Product Specification
2SA1110
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SC2590
·Excellent current IC characteristics of forward
current transfer ratio hFE vs. collector
·High transition frequency fT
·Optimum for the driver stage of a 40w to
60w output amplifier
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-0.5
A
ICM
Collector current-Peak
-1.0
A
PC
Collector power dissipation
1.2*
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
Note) *: Without heat sink
TC=25
SavantIC Semiconductor
Product Specification
2SA1110
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-100µA;IB=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10µA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-0.3A ;IB=-30mA
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-0.3A ;IB=-30mA
-1.2
V
hFE-1
DC current gain
IC=-150mA ; VCE=-10V
65
hFE-2
DC current gain
IC=-0.5A ; VCE=-5V
50
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-50mA ; VCB=-10V,
hFE-1 Classifications
P
Q
R
S
65-110
90-155
130-220
185-330
2
MIN
TYP.
MAX
UNIT
330
100
30
200
pF
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SA1110
SavantIC Semiconductor
Product Specification
2SA1110
Silicon PNP Power Transistors
4