Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 5 V 7 A 0.1 A 70 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2386 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=6A ;IB=6mA 2.5 V VBE Base-emitter voltage IC=6A ; VCE=5V 3.0 V ICBO Collector cut-off current VCB=140V IE=0 5.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 μA hFE-1 DC current gain IC=6A ; VCE=5V 5000 hFE-2 DC current gain IC=10A ; VCE=5V 2000 Cob Collector output capacitance IE=0 ; VCB=10V;f=1MHz 90 pF Transition frequency IC=1A ; VCE=5V 30 MHz fT CONDITIONS hFE-1 Classifications A B C 5000-12000 9000-18000 15000-30000 2 MIN TYP. MAX 140 UNIT V 30000 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD2386