Inchange Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD330 ・Low collector saturation voltage APPLICATIONS ・Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL OND VALUE UNIT -50 V Open base -50 V Open collector -5 V Collector current (DC) -2 A ICM Collector current-Peak -5 A PC Collector dissipation VCBO VCEO VEBO IC PARAMETER R O T UC Collector-base voltage IC M E ES ANG INCH Collector-emitter voltage Emitter-base voltage CONDITIONS Open emitter Ta=25℃ 1.75 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX Collector-emitter voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 40 hFE-2 DC current gain IC=-0.1A ; VCE=-2V 35 导体 半 电 Transition frequency 固 IC=-0.5A ; VCE=-5V 40-80 D M E S GE E F N A H INC 60-120 100-200 160-320 2 V 320 8 R O T UC D N O IC hFE-1Classifications C -50 UNIT VCEO fT PARAMETER MHz Inchange Semiconductor Product Specification 2SB514 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3