Inchange Semiconductor Product Specification 2SC2258 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High transition frequency fT ・High collector-emitter voltage VCEO APPLICATIONS ・For high breakdown voltage general amplification ・For video output amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector- emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICM Collector current-peak 0.15 A 1.2*1 PC Collector power dissipation TC=25℃ W 2 4* Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Note :*1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification 2SC2258 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL ICER PARAMETER CONDITIONS MIN TYP. MAX UNIT 100 μA Collector cutoff current VCE=250V;RBE=100kΩ Emitter-base breakdown voltage IE=0.1mA ;IC=0 Collector-emitter saturation voltage IC=50mA ;IB=5m A 1.2 V VBE Base-emitter voltage IC=40mA ; VCE=20V 1.2 V hFE-1 DC current gain IC=40mA ; VCE=20V 40 hFE-2 DC current gain IC=5mA ; VCE=50V 30 COB Output capacitance IE=0; VCB=50V;f=1MHz 4.5 pF fT Transition frequency IE=-10mA ; VCE=10V,f=200MHz V(BR)EBO VCEsat 2 7 V 3 100 MHz Inchange Semiconductor Product Specification 2SC2258 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC2258 Silicon NPN Power Transistors 4