isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 2000(Min)@ (VCE= 4V, IC= 5A) ·Large Current Capability ·Complement to Type 2SB1259 APPLICATIONS ·Driver for solenoid, motor and general purpose applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT 120 V 120 V 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 15 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SD2081 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2081 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 5mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 5A; VCE= 4V COB Output Capacitance fT CONDITIONS w w isc Website：www.iscsemi.cn TYP. MAX 120 B n c . i m e UNIT V B s c s i . w Current-Gain—Bandwidth Product MIN 2000 IE= 0; VCB= 10V; ftest= 1.0MHz 95 pF IE= -0.5A; VCE= 12V 60 MHz 2