Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SB688 APPLICATIONS ・Power amplifier applications ・Recommend for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 120 V Collector-emitter voltage Open base 120 V Emitter-base voltage Open collector 5 V 8 A 0.8 A 80 W IC Collector current IB Base current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO CONDITIONS MIN TYP. MAX IC=50mA ,IB=0 Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V VBE Base-emitter voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=1A ; VCE=5V fT Cob 55-110 V 55 160 12 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Output capacitance IE=0 ; VCB=10V ;f=1MHz hFE Classifications R 120 UNIT Base-emitter breakdown voltage VCEsat PARAMETER O 80-160 2 170 MHz pF Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4