ISC 2SD718

Inchange Semiconductor
Product Specification
2SD718
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(I) package
・Complement to type 2SB688
APPLICATIONS
・Power amplifier applications
・Recommend for 45~50W audio frequency
amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
120
V
Collector-emitter voltage
Open base
120
V
Emitter-base voltage
Open collector
5
V
8
A
0.8
A
80
W
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD718
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
CONDITIONS
MIN
TYP.
MAX
IC=50mA ,IB=0
Collector-emitter saturation voltage
IC=5A; IB=0.5A
2.5
V
VBE
Base-emitter voltage
IC=5A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=1A ; VCE=5V
fT
Cob
55-110
V
55
160
12
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
hFE Classifications
R
120
UNIT
Base-emitter breakdown voltage
VCEsat
‹
PARAMETER
O
80-160
2
170
MHz
pF
Inchange Semiconductor
Product Specification
2SD718
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SD718
Silicon NPN Power Transistors
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
4