isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD550 DESCRIPTION ·High Power Dissipation ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 110V(Min) APPLICATIONS ·Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 130 V VCER Collector-Emitter Voltage RBE= 100Ω 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD550 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0 110 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; RBE= 100Ω 130 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.5A 2 V VBE(on) Base-Emitter On Voltage IC= 4A ;VCE= 4V 1.75 V ICER Collector Cutoff Current VCE= 110V; RBE= 100Ω 1 mA ICEO Collector Cutoff Current VCE= 95V; IB= 0 5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE DC Current Gain IC= 4A ; VCE= 4V Current Gain-Bandwidth Product IC= 0.2A ; VCE= 10V fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B B 15 MAX UNIT 75 5 MHz