CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT(RMS) IT(AV)M Phase Control Thyristor ISOPLUS220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS220TM Type A C 1 2 800 1200 CS 19-08ho1C CS 19-12ho1C 3 G Isolated back surface * * Patent pending Symbol Test Conditions IT(RMS) IT(AV)M TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 V I2t (di/dt)cr (dv/dt)cr Maximum Ratings 35 13 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 100 105 A A TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 85 90 A A TVJ = 45°C VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 50 45 A2s A2s TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 36 33 A2s A2s TVJ = TVJM repetitive, IT = 20 A f = 50 Hz, tP =200 µs VD = 2/3 VDRM IG =0.08 A non repetitive, IT = IT(AV)M diG/dt = 0.08 A/µs 100 A/µs l l l l l TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M Features l tP = tP = 500 A/µs 500 V/µs l 30 µs 300 µs PGAV W W W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C 2500 V~ 260 °C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA TL 1.6mm from case; 10s FC Mounting force 11...65 / 2.4...11 Weight 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode-to-tab capacitance (15pF typical) Planar passivated chips Epoxy meets UL 94V-0 High performance glass passivated chip Long-term stability of leakage current and blocking voltage Applications l 5 2.5 0.5 PGM Features l l l Motor control Power converter AC power controller Light and temperature control SCR for inrush current limiting in power supplies or AC drive Advantages l l Space and weight savings Simple mounting N / lb g IXYS reserves the right to change limits, conditions and dimensions. 98789 (5/01) © 2001 IXYS All rights reserved CS 19 Symbol Test Conditions Characteristic Values IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM ≤ 1 VT IT ≤ 1.65 V VT0 rT For power-loss calculations only (TVJ = 125°C) 0.87 29 V mΩ VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; IL = 30 A; TVJ = 25°C mA TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C ≤ ≤ ≤ ≤ 1.5 2.5 25 50 V V mA mA VD = 2/3 VDRM ≤ ≤ 0.2 3 V mA TVJ = 25°C; tP = 10 µs IG =0.08 A; diG/dt =0.08 A/µs ≤ 75 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 50 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.08 A; diG/dt = 0.08 A/µs ≤ 2 µs RthJC RthCK DC current DC current typical 1.7 0.6 K/W K/W a Max. acceleration, 50 Hz 50 m/s2 ISOPLUS220 OUTLINE Note: All terminals are solder plated. 1 - Cathode 2 - Anode 3 - Gate